Datasheet

SiSH101DN
www.vishay.com
Vishay Siliconix
S18-1175-Rev. A, 26-Nov-2018
4
Document Number: 77305
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Source-Drain Diode Forward Voltage
Threshold Voltage
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
Safe Operating Area
0.001
0.01
0.1
1
10
100
0.0 0.2 0.4 0.6 0.8 1.0 1.2
I
S
- Source Current (A)
V
SD
- Source-to-Drain Voltage (V)
T
J
= 150 °C
T
J
= 25 °C
- 0.4
- 0.2
0.2
0
0.4
0.6
0.8
- 50 - 25 0 25 50 75 100 125 150
V
GS(th)
- Variance (V)
T
J
- Temperature (°C)
I
D
= 250 μA
I
D
= 1 mA
0.000
0.010
0.020
0.030
0.040
0.050
0 2 4 6 8 10
R
DS(on)
- On-Resistance (Ω)
V
GS
- Gate-to-Source Voltage (V)
T
J
= 125 °C
T
J
= 25 °C
I
D
= 15 A
0
20
40
60
80
100
0.001 0.01 0.1 1 10
Power (W)
Time (s)
0.01
0.1
1
10
100
0.01 0.1 1 10 100
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specied
100 μs
100 ms
Limited by R
DS(on)
*
1 ms
I
DM
Limited
T
A
= 25 °C
Single Pulse
BVDSS Limited
10 ms
10 s
1 s
DC
I
D
Limited