Datasheet

SiSH101DN
www.vishay.com
Vishay Siliconix
S18-1175-Rev. A, 26-Nov-2018
3
Document Number: 77305
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Output Characteristics
On-Resistance vs. Drain Current
Gate Charge
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0
16
32
48
64
80
0.0 0.5 1.0 1.5 2.0 2.5
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
V
GS
= 3 V
V
GS
= 4 V
V
GS
= 10 V thru 5 V
V
GS
= 2 V
0.0000
0.0040
0.0080
0.0120
0.0160
0.0200
0 16 32 48 64 80
R
DS(on)
- On-Resistance (Ω)
I
D
- Drain Current (A)
V
GS
= 4.5 V
V
GS
= 10 V
0
2
4
6
8
10
0 14 28 42 56 70
V
GS
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
DS
= 15 V
V
DS
= 20 V
V
DS
= 10 V
I
D
= 10 A
0
16
32
48
64
80
0.0 1.0 2.0 3.0 4.0 5.0 6.0
I
D
- Drain Current (A)
V
GS
- Gate-to-Source Voltage (V)
T
C
= 25 °C
T
C
= 125 °C
T = - 55 °C
0
1000
2000
3000
4000
5000
0 4 8 12 16 20
C - Capacitance (pF)
V
DS
- Drain-to-Source Voltage (V)
C
iss
C
oss
C
rss
0.6
0.8
1.0
1.2
1.4
1.6
- 50 - 25 0 25 50 75 100 125 150
R
DS(on)
- On-Resistance (Normalized)
T
J
- Junction Temperature (°C)
I
D
= 15 A
V
GS
= 10 V
V
GS
= 4.5 V