Datasheet

SiSF20DN
www.vishay.com
Vishay Siliconix
S18-1210-Rev. A, 10-Dec-2018
2
Document Number: 76915
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Notes
a. Pulse test; pulse width  300 μs, duty cycle  2 %
b. Guaranteed by design, not subject to production testing
c. On single MOSFET
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (T
J
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-source breakdown voltage V
DS
V
GS
= 0 V, I
D
= 250 μA 60 - -
V
Gate-source threshold voltage V
GS(th)
V
S1S2
= V
GS
, I
D
= 250 μA 1 - 3
Gate-source leakage I
GSS
V
S1S2
= 0 V, V
GS
= ± 20 V - - ± 100 nA
Zero gate voltage drain current I
DSS
V
S1S2
= 60 V, V
GS
= 0 V - - 1
μA
V
S1S2
= 60 V, V
GS
= 0 V, T
J
= 70 °C - - 15
On-state drain current
a
I
S1S2(on)
V
S1S2
 10 V, V
GS
= 10 V 20 - - A
Drain-source on-state resistance
a
R
S1S2(on)
V
GS
= 10 V, I
S1S2
= 7 A - 0.0100 0.0130

V
GS
= 4.5 V, I
S1S2
= 5 A - 0.0140 0.0185
Forward transconductance
a
g
fs
V
S1S2
= 10 V, I
S1S2
= 25 A - 75 - S
Dynamic
b, c
Input capacitance C
iss
V
DS
= 30 V, V
GS
= 0 V, f = 1 MHz
- 1290 -
pFOutput capacitance C
oss
- 340 -
Reverse transfer capacitance C
rss
-8-
Total gate charge Q
g
V
DS
= 30 V, V
GS
= 10 V, I
D
=5 A
-2233
nC
V
DS
= 30 V, V
GS
= 4.5 V, I
D
= 5 A
- 10.2 16
Gate-source charge Q
gs
-3.9-
Gate-drain charge Q
gd
-2.9-
Gate resistance R
g
f = 1 MHz 0.14 0.7 1.4 
Turn-on delay time t
d(on)
V
DD
= 30 V, R
L
= 6 , I
S1S2
 5 A,
V
GEN
= 10 V, R
g
= 1 
-1020
ns
Rise time t
r
-510
Turn-off delay time t
d(off)
-1940
Fall time t
f
-510
Turn-on delay time t
d(on)
V
DD
= 30 V, R
L
= 6 , I
D
 5 A,
V
GEN
= 4.5 V, R
g
= 1 
-1530
Rise time t
r
- 50 100
Turn-off delay time t
d(off)
-2450
Fall time t
f
-715
Drain-Source Body Diode Characteristics
c
Continuous source-drain diode current I
S1S2
T
C
= 25 °C
--52
A
Pulse diode forward current I
S1S2M
- - 100
Body diode reverse recovery time t
rr
I
F
= 5 A, di/dt = 100 A/μs,
T
J
= 25 °C
-3060ns
Body diode reverse recovery charge Q
rr
-1835nC
Reverse recovery fall time t
a
-15-
ns
Reverse recovery rise time t
b
-15-