Datasheet

SiSF02DN
www.vishay.com
Vishay Siliconix
S19-0104-Rev. A, 04-Feb-2019
4
Document Number: 76933
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
10
100
1000
10000
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1.0 1.2
Axis Title
1st line
2nd line
2nd line
I
FS1S2
- Source Current (A)
V
FS1S2
- Source-to-Source Voltage (V)
T
J
= 150 °C
T
J
= 25 °C
10
100
1000
10000
0
0.004
0.008
0.012
0.016
0.020
0246810
Axis Title
1st line
2nd line
2nd line
R
DS(on)
- On-Resistance (Ω)
V
GS
- Gate-to-Source Voltage (V)
T
J
= 125 °C
T
J
= 25 °C
I
D
= 7 A
10
100
1000
10000
1.0
1.2
1.4
1.6
1.8
2.0
-50 -25 0 25 50 75 100 125 150
Axis Title
1st line
2nd line
2nd line
V
GS(th)
- Treshold Voltage (V)
T
J
- Junction Temperature (°C)
I
D
= 250 μA
10
100
1000
10000
0
20
40
60
80
0.001 0.01 0.1 1 10 100 1000
Axis Title
1st line
2nd line
2nd line
P - Power (W)
t - Time (s)