Datasheet

SiSF02DN
www.vishay.com
Vishay Siliconix
S19-0104-Rev. A, 04-Feb-2019
3
Document Number: 76933
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Output Characteristics
On-Resistance vs. Source Current and Gate Voltage
Gate Charge
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
10
100
1000
10000
0
20
40
60
80
100
0 0.5 1 1.5 2 2.5 3
Axis Title
1st line
2nd line
2nd line
I
S1S2
- Source Current (A)
V
S1S2
- Source-to-Source Voltage (V)
V
GS
= 3 V
V
GS
= 10 V thru 4 V
10
100
1000
10000
0
0.001
0.002
0.003
0.004
0.005
0.006
0 20406080100
Axis Title
1st line
2nd line
2nd line
R
S1S2(on)
- On-Resistance (Ω)
I
S1S2
- Source Current (A)
V
GS
= 10 V
V
GS
= 4.5 V
Note: for one channel only
10
100
1000
10000
0
2
4
6
8
10
0 5 10 15 20 25 30 35
1st line
2nd line
2nd line
V
GS
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
I
D
= 5 A
V
DS
= 10 V
V
DS
= 15 V
V
DS
= 5 V
10
100
1000
10000
0
20
40
60
80
100
01234
Axis Title
1st line
2nd line
2nd line
I
D
- Source Current (A)
V
GS
- Gate-to-Source Voltage (V)
T
C
= 125 °C
T
C
= 25 °C
T
C
= -55 °C
Note: for one channel only
10
100
1000
10000
0
500
1000
1500
2000
2500
3000
0 5 10 15 20 25
1st line
2nd line
2nd line
C - Capacitance (pF)
V
DS
- Drain-to-Source Voltage (V)
C
iss
C
rss
C
oss
10
100
1000
10000
0.6
0.8
1.0
1.2
1.4
1.6
-50 -25 0 25 50 75 100 125 150
Axis Title
1st line
2nd line
2nd line
R
S1S2(on)
- On-Resistance (Normalized)
T
J
- Junction Temperature (°C)
I
D
= 7 A
V
GS
= 4.5 V
V
GS
= 10 V