Datasheet

Document Number: 68805
S-82301-Rev. A, 22-Sep-08
www.vishay.com
3
Vishay Siliconix
SiS406DN
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Output Characteristics
On-Resistance vs. Drain Current and Gate Voltage
Gate Charge
0
10
20
30
40
50
0.0 0.5 1.0 1.5 2.0
V
DS
- Drain-to-Source Voltage (V)
- Drain Current (A)I
D
V
GS
=10thru 4 V
V
GS
=3V
0.006
0.008
0.010
0.012
0.014
0.016
0 1020304050
- On-Resistance (Ω)R
DS(on)
I
D
- Drain Current (A)
V
GS
=4.5V
V
GS
=10V
0
2
4
6
8
10
0 5 10 15 20
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
V
DS
=22.5V
V
DS
=7.5V
I
D
=16A
V
DS
=15V
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0.0
0.5
1.0
1.5
2.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
V
GS
- Gate-to-Source Voltage (V)
- Drain Current (A)I
D
T
C
= 25 °C
T
C
= 125 °C
T
C
= - 55 °C
0
300
600
900
1200
1500
0 6 12 18 24 30
C
iss
V
DS
- Drain-to-Source Voltage (V)
C - Capacitance (pF)
C
oss
C
rss
0.7
0.9
1.1
1.3
1.5
1.7
- 50 - 25 0 25 50 75 100 125 150
T
J
-Junction Temperature (°C)
(Normalized)
- On-Resistance
R
DS(on)
V
GS
=10V
V
GS
=4.5V
I
D
=12A