Datasheet

ManualsBrandsVISHAY ManualsFETsSIS406DN-T1-GE3, MOSFET

Vishay Siliconix

SiS406DN

New Product

Document Number: 68805

S-82301-Rev. A, 22-Sep-08

www.vishay.com

N-Channel 30-V (D-S) MOSFET

FEATURES

• Halogen-free

• TrenchFET

Power MOSFET

• PWM Optimized

• New Low Thermal Resistance PowerPAK

Package with Low 1.07 mm Profile

• 100 % R

Tested

• 100 % UIS Tested

APPLICATIONS

• Adaptor Switch

• Load Switch

PRODUCT SUMMARY

(V) R

DS(on)

(Ω)I

(A)

0.011 at V

= 10 V

0.0145 at V

= 4.5 V

12.2

Ordering Information: SiS406DN-T1-GE3 (Lead (Pb)-free and Halogen-free)

3.30 mm

PowerPAK 1212-8

Bottom View

N-Channel MOSFET

Notes:

a. Surface Mounted on 1" x 1" FR4 board.

b. See Solder Profile (

http://www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and

is not required to ensure adequate bottom side solder interconnection.

c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.

ABSOLUTE MAXIMUM RATINGS T

= 25 °C, unless otherwise noted

Parameter Symbol 10 s Steady State Unit

Drain-Source Voltage

Gate-Source Voltage

± 25

Continuous Drain Current (T

= 150 °C)

= 25 °C

14 9

= 70 °C

12.2 7.3

Pulsed Drain Current

Continuous Source Current (Diode Conduction)

3.3 1.4

Single Pulse Avalanche Current

L = 0.1 mH

Avalanche Energy

20 mJ

Maximum Power Dissipation

= 25 °C

3.7 1.5

= 70 °C

2.3 1.0

Operating Junction and Storage Temperature Range

, T

stg

- 55 to 150

°C

Soldering Recommendations (Peak Temperature)

b, c

260

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

t ≤ 10 s

thJA

28 34

°C/W

Steady State 66 81

Maximum Junction-to-Case (Drain) Steady State

thJC

2.0 2.4

RoHS

COMPLIANT

Summary of content (13 pages)

PAGE 1
New Product SiS406DN Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.011 at VGS = 10 V 14 0.0145 at VGS = 4.5 V 12.2 • • • • Halogen-free TrenchFET® Power MOSFET PWM Optimized New Low Thermal Resistance PowerPAK® Package with Low 1.07 mm Profile • 100 % Rg Tested • 100 % UIS Tested RoHS COMPLIANT APPLICATIONS PowerPAK 1212-8 • Adaptor Switch • Load Switch S 3.30 mm 3.
PAGE 2
New Product SiS406DN Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 30 Typ. Max.
PAGE 3
New Product SiS406DN Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 50 2.0 TC = - 55 °C VGS = 10 thru 4 V I D - Drain Current (A) I D - Drain Current (A) 40 30 20 VGS = 3 V 1.5 1.0 TC = 25 °C 0.5 10 TC = 125 °C 0.5 1.0 1.5 0.0 0.0 2.0 1.0 1.5 2.0 2.5 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.016 1500 0.014 1200 VGS = 4.5 V 0.012 0.010 VGS = 10 V 3.0 Ciss 900 600 Coss 0.008 300 0.
PAGE 4
New Product SiS406DN Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.030 100 ID = 12 A R DS(on) - On-Resistance (Ω) I S - Source Current (A) 10 TJ = 25 °C TJ = 150 °C 1 0.1 TJ = - 50 °C 0.01 0.001 0.0 0.024 0.018 TJ = 125 °C 0.012 TJ = 25 °C 0.006 0.000 0.2 0.4 0.6 0.8 1.0 1.2 2 3 VSD - Source-to-Drain Voltage (V) 6 7 8 9 10 On-Resistance vs. Gate-to-Source Voltage 0.5 150 0.2 120 - 0.
PAGE 5
New Product SiS406DN Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 60 I D - Drain Current (A) 50 40 30 Package Limited 20 10 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) Current Derating* 70 2.20 60 1.76 Power (W) Power (W) 50 40 30 1.32 0.88 20 0.44 10 0 0.
PAGE 6
New Product SiS406DN Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 81 °C/W 0.02 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.
PAGE 7
Package Information www.vishay.com Vishay Siliconix D4 PowerPAK® 1212, (Single/Dual) W H L K E2 E4 M θ e 1 Z D5 D D2 2 2 D1 8 1 5 4 θ 4 b 3 L1 E3 A1 Backside View of Single Pad H 2 E1 E Detail Z 1 D1 2 3 K1 Notes: 1. Inch will govern 2 L K E2 E4 D2 D3(2x) D4 c A H D2 4 Dimensions exclusive of mold gate burrs 3. Dimensions exclusive of mold flash and cutting burrs b θ D5 θ E3 Backside View of Dual Pad DIM. MILLIMETERS INCHES MIN. MAX. MIN. MAX. 0.
PAGE 8
AN822 Vishay Siliconix PowerPAK® 1212 Mounting and Thermal Considerations Johnson Zhao MOSFETs for switching applications are now available with die on resistances around 1 mΩ and with the capability to handle 85 A. While these die capabilities represent a major advance over what was available just a few years ago, it is important for power MOSFET packaging technology to keep pace. It should be obvious that degradation of a high performance die by the package is undesirable.
PAGE 9
AN822 Vishay Siliconix PowerPAK 1212 DUAL To take the advantage of the dual PowerPAK 1212-8’s thermal performance, the minimum recommended land pattern can be found in Application Note 826, Recommended Minimum Pad Patterns With Outline Drawing Access for Vishay Siliconix MOSFETs. Click on the PowerPAK 1212-8 dual in the index of this document. The gap between the two drain pads is 10 mils. This matches the spacing of the two drain pads on the PowerPAK 1212-8 dual package.
PAGE 10
AN822 Vishay Siliconix TABLE 1: EQIVALENT STEADY STATE PERFORMANCE Package SO-8 TSSOP-8 TSOP-8 PPAK 1212 PPAK SO-8 Configuration Single Dual Single Dual Single Dual Single Dual Single Dual Thermal Resiatance RthJC(C/W) 20 40 52 83 40 90 2.4 5.5 1.8 5.5 PowerPAK 1212 Standard SO-8 49.8 °C 2.4 °C/W Standard TSSOP-8 85 °C 20 °C/W TSOP-6 149 °C 52 °C/W 125 °C 40 °C/W PC Board at 45 °C Figure 4.
PAGE 11
AN822 Vishay Siliconix 130 105 Spreading Copper (sq. in.) Spreading Copper (sq. in.) 120 95 110 100 RthJ A (°C/W) RthJA (°C/W) 85 75 65 90 80 50 % 100 % 70 100 % 55 0% 60 50 % 0% 50 45 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 Figure 5. Spreading Copper - Si7401DN Figure 6.
PAGE 12
Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR PowerPAK® 1212-8 Single 0.152 (3.860) 0.039 0.068 (0.990) (1.725) 0.010 (0.255) (2.390) 0.094 0.088 (2.235) 0.016 (0.405) 0.026 (0.660) 0.025 0.030 (0.635) (0.760) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72597 Revision: 21-Jan-08 www.vishay.
PAGE 13
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