Datasheet

SiS128LDN
www.vishay.com
Vishay Siliconix
S19-0287-Rev. A, 01-Apr-2019
3
Document Number: 76259
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Output Characteristics
On-Resistance vs. Drain Current and Gate Voltage
Gate Charge
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
10
100
1000
10000
0
20
40
60
80
100
012345
Axis Title
1st line
2nd line
2nd line
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
V
GS
= 10 V thru 5 V
V
GS
= 3 V
V
GS
= 2 V
V
GS
= 4 V
10
100
1000
10000
0.0100
0.0140
0.0180
0.0220
0.0260
0.0300
0 1530456075
Axis Title
1st line
2nd line
2nd line
R
DS(on)
- On-Resistance (Ω)
I
D
- Drain Current (A)
V
GS
= 4.5 V
V
GS
= 10 V
10
100
1000
10000
0
2
4
6
8
10
0 4 8 12 16 20
Axis Title
1st line
2nd line
2nd line
V
GS
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
I
D
= 10 A
V
DS
= 20 V, 40 V, 60 V
10
100
1000
10000
0
16
32
48
64
80
0 1.2 2.4 3.6 4.8 6
Axis Title
1st line
2nd line
2nd line
I
D
- Drain Current (A)
V
GS
- Gate-to-Source Voltage (V)
T
C
= 125 °C
T
C
= 25 °C
T
C
= -55 °C
10
100
1000
10000
1
10
100
1000
10 000
0 102030405060
Axis Title
1st line
2nd line
2nd line
C - Capacitance (pF)
V
DS
- Drain-to-Source Voltage (V)
C
iss
C
rss
C
oss
10
100
1000
10000
0.3
0.7
1.1
1.5
1.9
2.3
-50-25 0 255075100125150
Axis Title
1st line
2nd line
2nd line
R
DS(on)
- On-Resistance (Normalized)
T
J
- Junction Temperature (°C)
V
GS
= 4.5 V, 10 A
V
GS
= 10 V, 10 A