Datasheet

SiS126DN
www.vishay.com
Vishay Siliconix
S19-0093-Rev. A, 04-Feb-2019
1
Document Number: 79726
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
N-Channel 80 V (D-S) MOSFET
FEATURES
• TrenchFET
®
Gen IV power MOSFET
• Very low R
DS
x Q
g
figure-of-merit (FOM)
• Tuned for the lowest R
DS
x Q
oss
FOM
• 100 % R
g
and UIS tested
• Material categorization: for definitions of
compliance please see www.vishay.com/doc?99912
APPLICATIONS
• Synchronous rectification
• Primary side switch
•DC/DC converter
• Motor drive switch
• Battery and load switch
• Industrial
Notes
a. Package limited
b. Surface mounted on 1" x 1" FR4 board
c. t = 10 s
d. See solder profile (www.vishay.com/doc?73257
). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components
f. Maximum under steady state conditions is 81 °C/W
g. T
C
= 25 °C
PRODUCT SUMMARY
V
DS
(V) 80
R
DS(on)
max. () at V
GS
= 10 V 0.0102
R
DS(on)
max. () at V
GS
= 7.5 V 0.0125
Q
g
typ. (nC) 16
I
D
(A) 45.1
a, g
Configuration Single
PowerPAK
®
1212-8 Single
Top View
1
3.3 mm
3.3 mm
Bottom View
1
S
1
S
2
S
3
S
4
G
D
8
D
7
D
6
D
5
N-Channel MO
SFET
G
D
S
ORDERING INFORMATION
Package PowerPAK 1212-8
Lead (Pb)-free and halogen-free SiS126DN-T1-GE3
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-source voltage V
DS
80
V
Gate-source voltage V
GS
± 20
Continuous drain current (T
J
= 150 °C)
T
C
= 25 °C
I
D
45.1
A
T
C
= 70 °C 36.1
T
A
= 25 °C 12
b, c
T
A
= 70 °C 9.7
b, c
Pulsed drain current (t = 100 μs) I
DM
100
Continuous source-drain diode current
T
C
= 25 °C
I
S
47.2
T
A
= 25 °C 3.3
b, c
Single pulse avalanche current
L = 0.1 mH
I
AS
20
Single pulse avalanche energy E
AS
20 mJ
Maximum power dissipation
T
C
= 25 °C
P
D
52
W
T
C
= 70 °C 33.3
T
A
= 25 °C 3.7
b, c
T
A
= 70 °C 2.4
b, c
Operating junction and storage temperature range T
J
, T
stg
-55 to +150
°C
Soldering recommendations (peak temperature)
c
260
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYPICAL MAXIMUM UNIT
Maximum junction-to-ambient
b
t  10 s R
thJA
24 33
°C/W
Maximum junction-to-case (drain) Steady state R
thJC
1.9 2.4