Datasheet

SiS108DN
www.vishay.com
Vishay Siliconix
S18-1285-Rev. A, 31-Dec-2018
3
Document Number: 77338
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Output Characteristics
On-Resistance vs. Drain Current and Gate Voltage
Gate Charge
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
10
100
1000
10000
0
5
10
15
20
25
30
0 0.5 1.0 1.5 2.0 2.5 3.0
Axis Title
1st line
2nd line
2nd line
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
V
GS
= 5 V
V
GS
= 4 V
V
GS
= 10 V thru 6 V
10
100
1000
10000
0
0.01
0.02
0.03
0.04
0.05
0 5 10 15 20 25 30
Axis Title
1st line
2nd line
2nd line
R
DS(on)
- On-Resistance (Ω)
I
D
- Drain Current (A)
V
GS
= 10 V
V
GS
= 7.5 V
10
100
1000
10000
0
2
4
6
8
10
0246810
Axis Title
1st line
2nd line
2nd line
V
GS
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
I
D
= 4 A
V
DS
= 40 V
V
DS
= 64 V
V
DS
= 20 V
10
100
1000
10000
0
5
10
15
20
25
30
0123456
Axis Title
1st line
2nd line
2nd line
I
D
- Drain Current (A)
V
GS
- Gate-to-Source Voltage (V)
T
C
= 125 °C
T
C
= 25 °C
T
C
= -55 °C
10
100
1000
10000
0
100
200
300
400
500
600
700
0 20406080
Axis Title
1st line
2nd line
2nd line
C - Capacitance (pF)
V
DS
- Drain-to-Source Voltage (V)
C
iss
C
rss
C
oss
10
100
1000
10000
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
-50 -25 0 25 50 75 100 125 150
Axis Title
1st line
2nd line
2nd line
R
DS(on)
- On-Resistance (Normalized)
T
J
- Junction Temperature (°C)
I
D
= 4 A
V
GS
= 7.5 V
V
GS
= 10 V