Datasheet

SiRA28BDP
www.vishay.com
Vishay Siliconix
S18-1170-Rev. A, 26-Nov-2018
4
Document Number: 77395
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Source-Drain Diode Forward Voltage
Threshold Voltage
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
10
100
1000
10000
0.01
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1.0 1.2
Axis Title
1st line
2nd line
2nd line
I
S
- Source Current (A)
V
SD
- Source-to-Drain Voltage (V)
T
J
= 150 °C
T
J
= 25 °C
10
100
1000
10000
1.0
1.2
1.4
1.6
1.8
2.0
-50 -25 0 25 50 75 100 125 150
Axis Title
1st line
2nd line
2nd line
V
GS(th)
- Variance (V)
T
J
- Junction Temperature (°C)
I
D
= 250 μA
10
100
1000
10000
0
0.01
0.02
0.03
0.04
0246810
Axis Title
1st line
2nd line
2nd line
R
DS(on)
- On-Resistance (Ω)
V
GS
- Gate-to-Source Voltage (V)
T
J
= 125 °C
T
J
= 25 °C
10
100
1000
10000
0
40
80
120
160
200
0.0001 0.001 0.01 0.1 1 10 100 1000
Axis Title
1st line
2nd line
2nd line
P - Power (W)
t - Time (s)