Datasheet
SiRA28BDP
www.vishay.com
Vishay Siliconix
S18-1170-Rev. A, 26-Nov-2018
2
Document Number: 77395
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Pulse test: pulse width 300 μs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing
c. Based on characterization, not subject to production testing
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (T
J
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-source breakdown voltage V
DS
V
GS
= 0 V, I
D
= 250 μA 30 - -
V
Drain-source breakdown voltage
(c)
(transient)
V
DSt
V
GS
= 0 V, I
D(aval)
= 35 A,
t
transcient
50 ns
36 - -
V
DS
temperature coefficient V
DS
/T
J
I
D
= 250 μA
-17-
mV/°C
V
GS(th)
temperature coefficient V
GS(th)
/T
J
--3.8-
Gate-source threshold voltage V
GS(th)
V
DS
= V
GS
, I
D
= 250 μA 1.2 - 2.4 V
Gate-source leakage I
GSS
V
DS
= 0 V, V
GS
= +20, -16 V - - ± 100 nA
Zero gate voltage drain current I
DSS
V
DS
= 30 V, V
GS
= 0 V - - 1
μA
V
DS
= 30 V, V
GS
= 0 V, T
J
= 55 °C - - 10
On-state drain current
a
I
D(on)
V
DS
5 V, V
GS
= 10 V 30 - - A
Drain-source on-state resistance
a
R
DS(on)
V
GS
= 10 V, I
D
= 10 A - 0.0061 0.0075
V
GS
= 4.5 V, I
D
= 8 A - 0.0093 0.0120
Forward transconductance
a
g
fs
V
DS
= 10 V, I
D
= 25 A - 35 - S
Dynamic
b
Input capacitance C
iss
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
- 582 -
pFOutput capacitance C
oss
- 231 -
Reverse transfer capacitance C
rss
-31-
C
rss
/C
iss
ratio -0.060.12
Total gate charge Q
g
V
DS
= 15 V, V
GS
= 10 V, I
D
= 10 A - 9.3 14
nCV
DS
= 15 V, V
GS
= 4.5 V, I
D
= 10 A
-4.56.8
Gate-source charge Q
gs
-2.2-
Gate-drain charge Q
gd
-1.2-
Output charge Q
oss
V
DS
= 15 V, V
GS
= 0 V - 6.2 -
Gate resistance R
g
f = 1 MHz 1.4 7 14
Turn-on delay time t
d(on)
V
DD
= 15 V, R
L
= 1.5
I
D
10 A, V
GEN
= 10 V, R
g
= 1
-1020
ns
Rise time t
r
-510
Turn-off delay time t
d(off)
-1730
Fall time t
f
-510
Turn-on delay time t
d(on)
V
DD
= 15 V, R
L
= 1.5
I
D
10 A, V
GEN
= 4.5 V, R
g
= 1
-1630
Rise time t
r
-76150
Turn-off delay time t
d(off)
-1635
Fall time t
f
-1735
Drain-Source Body Diode Characteristics
Continuous source-drain diode current I
S
T
C
= 25 °C - - 16
A
Pulse diode forward current
a
I
SM
--90
Body diode voltage V
SD
I
S
= 5 A - 0.8 1.1 V
Body diode reverse recovery time t
rr
I
F
= 5 A, di/dt = 100 A/μs,
T
J
= 25 °C
-1530ns
Body diode reverse recovery charge Q
rr
-510nC
Reverse recovery fall time t
a
-7-
ns
Reverse recovery rise time t
b
-8-