Datasheet

www.vishay.com
4
Document Number: 68879
S-82018-Rev. A, 01-Sep-08
Vishay Siliconix
SiR466DP
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Source-Drain Diode Forward Voltage
Threshold Voltage
0.0 0.2 0.4 0.6 0.8 1.0 1.2
1
0.01
0.001
0.1
10
100
T
J
= 150 °C
T
J
= 25 °C
V
SD
-Source-to-Drain Voltage (V)
- Source Current (A)I
S
- 0.8
- 0.6
- 0.4
- 0.2
0.0
0.2
0.4
- 50 - 25 0 25 50 75 100 125 150
I
D
= 250 µA
I
D
=5mA
Variance (V)V
GS(th)
T
J
- Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
0.000
0.004
0.008
0.012
0.016
0.020
012345678 910
T
J
=25 °C
T
J
= 125 °C
I
D
=15A
- On-Resistance (Ω)R
DS(on)
V
GS
- Gate-to-Source Voltage (V)
0
50
100
150
200
250
011100.00.010.1
Time (s)
Power (W)
Safe Operating Area, Junction-to-Ambient
0.01
100
1
100
0.01
0.1
1ms
10 ms
100 ms
0.1 1 10
10
T
A
= 25 °C
Single Pulse
Limited byR
DS(on)
*
1s
DC
10 s
BVDSS Limited
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
- Drain Current (A)
I
D