Datasheet

Document Number: 68879
S-82018-Rev. A, 01-Sep-08
www.vishay.com
3
Vishay Siliconix
SiR466DP
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Output Characteristics
On-Resistance vs. Drain Current and Gate Voltage
Gate Charge
0
14
28
42
56
70
0.0 0.5 1.0 1.5 2.0 2.5
V
GS
=10thru 4 V
V
GS
=3V
V
DS
- Drain-to-Source Voltage (V)
- Drain Current (A)I
D
0.0025
0.0030
0.0035
0.0040
0.0045
0.0050
01428 42 56 70
V
GS
=4.5V
V
GS
=10V
- On-Resistance (Ω)R
DS(on)
I
D
- Drain Current (A)
0
2
4
6
8
10
0918 27 36 45
V
DS
=20V
I
D
=10A
V
DS
=15V
V
DS
=10V
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0
2
4
6
8
10
012345
T
C
= 25 °C
T
C
= 125 °C
T
C
= - 55 °C
V
GS
- Gate-to-Source Voltage (V)
- Drain Current (A)I
D
061218 24 30
V
DS
- Drain-to-Source Voltage (V)
C - Capacitance (pF)
C
rss
0
700
1400
2100
2800
3500
C
iss
C
oss
0.6
0.8
1.0
1.2
1.4
1.6
1.8
- 50 - 25 0 25 50 75 100 125 150
V
GS
=4.5V
V
GS
=10V
I
D
=15A
T
J
-Junction Temperature (°C)
(Normalized)
- On-ResistanceR
DS(on)