Datasheet

ManualsBrandsVISHAY ManualsFETsSIR466DP-T1-GE3, MOSFET

Vishay Siliconix

SiR466DP

New Product

Document Number: 68879

S-82018-Rev. A, 01-Sep-08

www.vishay.com

N-Channel 30-V (D-S) MOSFET

FEATURES

• Halogen-free

• TrenchFET

Power MOSFET

• 100 % R

Tested

• 100 % UIS Tested

APPLICATIONS

• DC/DC Converter

- Low Side Switch

• Notebook PC

• Graphic Cards

• Server

PRODUCT SUMMARY

(V) R

DS(on)

(Ω)

(A)

(Typ.)

0.0035 at V

= 10 V

21.5 nC

0.0051 at V

= 4.5 V

Ordering Information: SiR466DP-T1-GE3 (Lead (Pb)-free and Halogen-free)

6.15 mm

5.15 mm

PowerPAK SO-8

Bottom View

N-Channel MOSFET

Notes:

a. Based on T

= 25 °C.

b. Surface Mounted on 1" x 1" FR4 board.

c. t = 10 s.

d. See Solder Profile (

http://www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and

is not required to ensure adequate bottom side solder interconnection.

e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.

f. Maximum under Steady State conditions is 65 °C/W.

g. Package Limited.

ABSOLUTE MAXIMUM RATINGS T

= 25 °C, unless otherwise noted

Parameter Symbol Limit Unit

Drain-Source Voltage

Gate-Source Voltage

± 20

Continuous Drain Current (T

= 150 °C)

= 25 °C

= 70 °C

= 25 °C

b, c

= 70 °C

22.5

b, c

Pulsed Drain Current

Continuous Source-Drain Diode Current

= 25 °C

4.5

b, c

Single Pulse Avalanche Current

L = 0.1 mH

Single Pulse Avalanche Energy

Maximum Power Dissipation

= 25 °C

= 70 °C

34.7

= 25 °C

5.0

b, c

= 70 °C

3.2

b, c

Operating Junction and Storage Temperature Range

, T

stg

- 55 to 150

°C

Soldering Recommendations (Peak Temperature)

d, e

260

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

b, f

t ≤ 10 s

thJA

20 25

°C/W

Maximum Junction-to-Case (Drain) Steady State

thJC

1.8 2.3

RoHS

COMPLIANT

Summary of content (13 pages)

PAGE 1
New Product SiR466DP Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0035 at VGS = 10 V 40g 0.0051 at VGS = 4.5 V 40g VDS (V) 30 Qg (Typ.) 21.5 nC S • DC/DC Converter - Low Side Switch • Notebook PC • Graphic Cards • Server 5.15 mm 1 Halogen-free TrenchFET® Power MOSFET 100 % Rg Tested 100 % UIS Tested RoHS COMPLIANT APPLICATIONS PowerPAK SO-8 6.
PAGE 2
New Product SiR466DP Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 30 Typ. Max.
PAGE 3
New Product SiR466DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10 70 VGS = 10 thru 4 V 8 I D - Drain Current (A) I D - Drain Current (A) 56 42 VGS = 3 V 28 6 4 TC = 25 °C 2 14 TC = 125 °C TC = - 55 °C 0 0.0 0 0.5 1.0 1.5 2.0 0 2.5 1 2 4 5 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.0050 3500 0.0045 VGS = 4.
PAGE 4
New Product SiR466DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 0.020 10 0.016 R DS(on) - On-Resistance (Ω) I S - Source Current (A) ID = 15 A TJ = 150 °C TJ = 25 °C 1 0.1 0.01 0.012 0.008 TJ = 125 °C 0.004 TJ = 25 °C 0.001 0.0 0.000 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 VSD - Source-to-Drain Voltage (V) 4 5 6 7 8 9 10 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.4 250 0.2 200 0.
PAGE 5
New Product SiR466DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 I D - Drain Current (A) 80 60 Package Limited 40 20 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) 65 2.5 52 2.0 39 1.5 Power (W) Power (W) Current Derating* 26 13 1.0 0.5 0 0.
PAGE 6
New Product SiR466DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 65 °C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.
PAGE 7
Package Information www.vishay.com Vishay Siliconix PowerPAK® SO-8, (Single/Dual) L H E2 K E4 θ D4 W 1 M 1 Z 2 D5 D2 e 2 D1 D 2 D 3 4 θ 4 b 3 L1 E3 θ A1 Backside View of Single Pad H K E2 E4 L 1 D1 D5 2 D2 Detail Z K1 2 E1 E D3 (2x) D4 c A θ 3 4 Notes 1. Inch will govern. 2 Dimensions exclusive of mold gate burrs. 3. Dimensions exclusive of mold flash and cutting burrs. E3 Backside View of Dual Pad MILLIMETERS DIM. MIN. A 0.97 A1 b 0.33 c 0.23 D 5.05 D1 4.80 D2 3.
PAGE 8
VISHAY SILICONIX www.vishay.com Power MOSFETs Application Note AN821 PowerPAK® SO-8 Mounting and Thermal Considerations by Wharton McDaniel MOSFETs for switching applications are now available with die on resistances around 1 m and with the capability to handle 85 A. While these die capabilities represent a major advance over what was available just a few years ago, it is important for power MOSFET packaging technology to keep pace.
PAGE 9
Application Note AN821 www.vishay.com Vishay Siliconix PowerPAK® SO-8 Mounting and Thermal Considerations PowerPAK SO-8 DUAL The pin arrangement (drain, source, gate pins) and the pin dimensions of the PowerPAK SO-8 dual are the same as standard SO-8 dual devices. Therefore, the PowerPAK device connection pads match directly to those of the SO-8. As in the single-channel package, the only exception is the extended drain connection area.
PAGE 10
Application Note AN821 www.vishay.
PAGE 11
Application Note AN821 www.vishay.com Vishay Siliconix PowerPAK® SO-8 Mounting and Thermal Considerations SYSTEM AND ELECTRICAL IMPACT OF PowerPAK SO-8 In any design, one must take into account the change in MOSFET RDS(on) with temperature (figure 7). On-Resistance vs. Junction Temperature R DS(on) - On-Resistance ( ) (Normalized) 1.8 VGS = 10 V ID = 23 A 1.6 1.
PAGE 12
Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR PowerPAK® SO-8 Single 0.260 (6.61) 0.150 (3.81) 0.050 0.174 (4.42) 0.154 (1.27) 0.026 (0.66) (3.91) 0.024 (0.61) 0.050 0.032 0.040 (1.27) (0.82) (1.02) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72599 Revision: 21-Jan-08 www.vishay.
PAGE 13
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