Datasheet

Document Number: 68823
S-82771-Rev. C, 17-Nov-08
www.vishay.com
3
Vishay Siliconix
SiR462DP
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Output Characteristics
On-Resistance vs. Drain Current and Gate Voltage
Gate Charge
0
10
20
30
40
50
60
70
0.0 0.5 1.0 1.5 2.0
V
GS
=10thru 4 V
V
GS
=3V
V
DS
- Drain-to-Source Voltage (V)
- Drain Current (A)I
D
0.002
0.004
0.006
0.008
0.010
0.012
0 10203040506070
V
GS
=10V
V
GS
=4.5V
- On-Resistance (Ω)R
DS(on)
I
D
- Drain Current (A)
0
2
4
6
8
10
0 5 10 15 20
V
DS
=22.5V
I
D
=20A
V
DS
=7.5V
V
DS
=15V
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0.0
0.2
0.4
0.6
0.8
1.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
T
C
= 25 °C
T
C
= 125 °C
T
C
=- 55 °C
V
GS
- Gate-to-Source Voltage (V)
- Drain Current (A)I
D
0
300
600
900
1200
1500
0 6 12 18 24 30
C
iss
C
oss
C
rss
V
DS
- Drain-to-Source Voltage (V)
C - Capacitance (pF)
0.7
0.9
1.1
1.3
1.5
1.7
- 50 - 25 0 25 50 75 100 125 150
V
GS
=10V
V
GS
=4.5V
I
D
=20A
T
J
-Junction Temperature (°C)
(Normalized)
- On-Resistance
R
DS(on)