Datasheet

ManualsBrandsVISHAY ManualsFETsSIR462DP-T1-GE3, MOSFET

Vishay Siliconix

SiR462DP

Document Number: 68823

S-82771-Rev. C, 17-Nov-08

www.vishay.com

N-Channel 30-V (D-S) MOSFET

FEATURES

• Halogen-free According to IEC 61249-2-21

• TrenchFET

Power MOSFET

• 100 % R

Tested

• 100 % UIS Tested

APPLICATIONS

• High-Side Switch

• Server, VRM, POL

• DC/DC

PRODUCT SUMMARY

(V) R

DS(on)

(Ω)

(A)

(Typ.)

0.0079 at V

= 10 V

8.8 nC

0.010 at V

= 4.5 V

6.15 mm

5.15 mm

PowerPAK SO-8

Bottom View

Ordering Information:

SiR462DP-T1-GE3 (Lead (Pb)-free and Halogen-free)

N-

hannel M

FET

Notes:

a. Based on T

= 25 °C. Package limited.

b. Surface Mounted on 1" x 1" FR4 board.

c. t = 10 s.

d. See Solder Profile (

http://www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed

and is not required to ensure adequate bottom side solder interconnection.

e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.

f. Maximum under Steady State conditions is 70 °C/W.

ABSOLUTE MAXIMUM RATINGS T

= 25 °C, unless otherwise noted

Parameter Symbol Limit Unit

Drain-Source Voltage V

Gate-Source Voltage V

± 20

Continuous Drain Current (T

= 150 °C)

= 25 °C

= 70 °C

= 25 °C

18.9

b, c

= 70 °C

15.1

b, c

Pulsed Drain Current I

Avalanche Current

L = 0.1 mH

Avalanche Energy E

Continuous Source-Drain Diode Current

= 25 °C

b, c

Maximum Power Dissipation

= 25 °C

41.7

= 70 °C

26.7

= 25 °C

4.8

b, c

= 70 °C

3.1

b, c

Operating Junction and Storage Temperature Range

, T

stg

- 55 to 150

°C

Soldering Recommendations (Peak Temperature)

d, e

260

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

b, f

t ≤ 10 s

thJA

21 26

°C/W

Maximum Junction-to-Case (Drain)

Steady State

thJC

2.4 3.0

Summary of content (13 pages)

PAGE 1
SiR462DP Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.0079 at VGS = 10 V 30a 0.010 at VGS = 4.5 V 30a • Halogen-free According to IEC 61249-2-21 • TrenchFET® Power MOSFET • 100 % Rg Tested • 100 % UIS Tested Qg (Typ.) 8.8 nC APPLICATIONS PowerPAK SO-8 S 6.15 mm • High-Side Switch • Server, VRM, POL • DC/DC 5.
PAGE 2
SiR462DP Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 30 Typ. Max.
PAGE 3
SiR462DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1.0 70 TC = - 55 °C VGS = 10 thru 4 V 60 I D - Drain Current (A) I D - Drain Current (A) 0.8 50 40 30 20 VGS = 3 V TC = 25 °C 0.6 0.4 0.2 10 TC = 125 °C 0.5 1.0 1.5 0.0 0.0 2.0 0.5 1.0 1.5 2.0 2.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.012 1500 0.010 1200 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 0 0.0 VGS = 4.
PAGE 4
SiR462DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 0.030 0.025 R DS(on) - On-Resistance (Ω) I S - Source Current (A) 10 TJ = 25 °C TJ = 150 °C 1 0.1 TJ = - 50 °C 0.01 0.001 0.0 0.020 0.015 TJ = 125 °C 0.010 0.005 TJ = 25 °C 0.000 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 150 0.2 120 Power (W) VGS(th) Variance (V) 5 6 7 8 9 10 On-Resistance vs. Gate-to-Source Voltage 0.5 - 0.1 ID = 5 mA 90 60 ID = 250 µA - 0.7 - 1.
PAGE 5
SiR462DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 75 I D - Drain Current (A) 60 45 Package Limited 30 15 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) 50 2.20 40 1.76 30 1.32 Power (W) Power (W) Current Derating* 20 10 0.88 0.44 0 0.
PAGE 6
SiR462DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 Notes: PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 70 °C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 0.01 10 -4 4.
PAGE 7
Package Information www.vishay.com Vishay Siliconix PowerPAK® SO-8, (Single/Dual) L H E2 K E4 θ D4 W 1 M 1 Z 2 D5 D2 e 2 D1 D 2 D 3 4 θ 4 b 3 L1 E3 θ A1 Backside View of Single Pad H K E2 E4 L 1 D1 D5 2 D2 Detail Z K1 2 E1 E D3 (2x) D4 c A θ 3 4 Notes 1. Inch will govern. 2 Dimensions exclusive of mold gate burrs. 3. Dimensions exclusive of mold flash and cutting burrs. E3 Backside View of Dual Pad MILLIMETERS DIM. MIN. A 0.97 A1 b 0.33 c 0.23 D 5.05 D1 4.80 D2 3.
PAGE 8
VISHAY SILICONIX www.vishay.com Power MOSFETs Application Note AN821 PowerPAK® SO-8 Mounting and Thermal Considerations by Wharton McDaniel MOSFETs for switching applications are now available with die on resistances around 1 m and with the capability to handle 85 A. While these die capabilities represent a major advance over what was available just a few years ago, it is important for power MOSFET packaging technology to keep pace.
PAGE 9
Application Note AN821 www.vishay.com Vishay Siliconix PowerPAK® SO-8 Mounting and Thermal Considerations PowerPAK SO-8 DUAL The pin arrangement (drain, source, gate pins) and the pin dimensions of the PowerPAK SO-8 dual are the same as standard SO-8 dual devices. Therefore, the PowerPAK device connection pads match directly to those of the SO-8. As in the single-channel package, the only exception is the extended drain connection area.
PAGE 10
Application Note AN821 www.vishay.
PAGE 11
Application Note AN821 www.vishay.com Vishay Siliconix PowerPAK® SO-8 Mounting and Thermal Considerations SYSTEM AND ELECTRICAL IMPACT OF PowerPAK SO-8 In any design, one must take into account the change in MOSFET RDS(on) with temperature (figure 7). On-Resistance vs. Junction Temperature R DS(on) - On-Resistance ( ) (Normalized) 1.8 VGS = 10 V ID = 23 A 1.6 1.
PAGE 12
Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR PowerPAK® SO-8 Single 0.260 (6.61) 0.150 (3.81) 0.050 0.174 (4.42) 0.154 (1.27) 0.026 (0.66) (3.91) 0.024 (0.61) 0.050 0.032 0.040 (1.27) (0.82) (1.02) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72599 Revision: 21-Jan-08 www.vishay.
PAGE 13
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