Datasheet

SiR120DP
www.vishay.com
Vishay Siliconix
S19-0092-Rev. A, 04-Feb-2019
4
Document Number: 79731
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
Safe Operating Area, Junction-to-Ambient
Note
a. V
GS
> minimum V
GS
at which R
DS(on)
is specified
10
100
1000
10000
0.01
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1.0 1.2
Axis Title
1st line
2nd line
2nd line
I
S
- Source Current (A)
V
SD
- Source-to-Drain Voltage (V)
T
J
= 150 °C
T
J
= 25 °C
10
100
1000
10000
0
0.006
0.012
0.018
0.024
0.030
0246810
Axis Title
1st line
2nd line
2nd line
R
DS(on)
- On-Resistance (Ω)
V
GS
- Gate-to-Source Voltage (V)
T
J
= 125 °C
T
J
= 25 °C
I
D
= 15 A
10
100
1000
10000
-1.2
-0.9
-0.6
-0.3
0
0.3
0.6
-50 -25 0 25 50 75 100 125 150
Axis Title
1st line
2nd line
2nd line
V
GS(th)
- Variance (V)
T
J
- Junction Temperature (°C)
I
D
= 5 mA
I
D
= 250 μA
10
100
1000
10000
0
100
200
300
400
500
0.001 0.01 0.1 1 10
Axis Title
1st line
2nd line
2nd line
P - Power (W)
t - Time (s)
10
100
1000
10000
0.01
0.1
1
10
100
1000
0.01 0.1 1 10 100
Axis Title
1st line
2nd line
2nd line
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
I
DM
limited
T
A
= 25 °C,
single pulse
Limited by R
DS(on)
a
BVDSS limited
10 ms
100 ms
1 ms
100 μs
I
D
limited
DC
10 s
1 s