Datasheet

SiHP30N60E
www.vishay.com
Vishay Siliconix
S15-0277- Rev. G, 23-Feb-15
4
Document Number: 91456
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Fig. 7 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 8 - Typical Source-Drain Diode Forward Voltage
Fig. 9 - Maximum Safe Operating Area
Fig. 10 - Maximum Drain Current vs. Case Temperature
Fig. 11 - Temperature vs. Drain-to-Source Voltage
0
4
8
12
16
20
24
0 25 50 75 100 125 150
V
GS
- Gate-to-Source Voltage (V)
Q
g
-Total Gate Charge (nC)
V
DS
= 480 V
I
D
= 15 A
V
DS
= 300 V
V
DS
= 120 V
0.001
0.01
0.1
1
10
100
1000
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
I
S
- Source Current (A)
V
SD
- Source-to-Drain Voltage (V)
T
J
= 150 °C
T
J
= 25 °C
V
DS
, Drain-to-Source Voltage (V)
I
D
, Drain Current (A)
0.1
1
10
100
1000
0.1 1 10 1000
* V
GS
> minimum V
GS
at which R
DS(on)
is specied
Operation in this area
limited by R
DS(on)
BVDSS Limited
T
C
= 25 °C
T
J
= 150 °C
Single Pulse
100 μs
1 ms
10 ms
100
I
DM
Limited
5.0
10.0
15.0
20.0
25.0
30.0
25 50 75 100 125 150
I
D
, Drain Current (A)
T
C
-Temperature (°C)
0
V
DS
, Drain-to-Source Breakdown
Voltage (V)
T
J
-Temperature (°C)
550
575
600
625
650
675
700
725
-
60
-
40
-
20 0
20 40 60 80 100 120 140 160