Datasheet
SiHP22N60E
www.vishay.com
Vishay Siliconix
S15-0277-Rev. H, 23-Feb-15
3
Document Number: 91470
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Fig. 1 - Typical Output Characteristics
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - C
oss
and E
oss
vs. V
DS
V
DS
, Drain-to-Source Voltage (V)
I
D
, Drain-to-Source Current (A)
0
20
40
60
80
T
J
= 25 °C
TOP 15 V
14 V
13 V
12 V
11 V
10 V
9 V
5 V
6 V
7 V
8 V
0 5 10 15 20 25 30
V
DS
, Drain-to-Source Voltage (V)
I
D
, Drain-to-Source Current (A)
10
01020
0
40
5 V
6 V
7 V
TOP 15 V
14 V
13 V
12 V
11 V
10 V
9 V
8 V
20
30
T
J
= 150 °C
5152530
V
GS
, Gate-to-Source Voltage (V)
I
D
, Drain-to-Source Current (A)
40
10
010 25
60
30
20
50
51520
0
T
J
= 25 °C
T
J
= 150 °C
T
J
, Junction Temperature (°C)
R
DS(on)
, Drain-to-Source
2.5
0.5
- 60
3
2
1.5
1
0
- 40 - 20
0
20 40 60 80 100 120
140
160
V
GS
= 10 V
I
D
= 11 A
On Resistance (Normalized)
V
DS
, Drain-to-Source Voltage (V)
Capacitance (pF)
100
10
0 200
400
10 000
1
1000
100 300
500 600
C
iss
C
oss
C
rss
V
GS
= 0 V, f = 1 MHz
C
iss
= C
gs
+ C
gd
, C
ds
Shorted
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
0
2
4
6
8
10
12
14
50
500
5000
0 100 200 300 400 500 600
E
oss
(μJ)
C
oss
(pF)
V
DS
C
oss
E
oss