Datasheet

SiHH068N60E
www.vishay.com
Vishay Siliconix
S18-0934-Rev. B, 17-Sep-2018
3
Document Number: 92121
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Fig. 1 - Typical Output Characteristics
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - C
oss
and E
oss
vs. V
DS
0
30
60
90
120
0 5 10 15 20
I
D
, Drain-to-Source Current (A)
V
DS
, Drain-to-Source Voltage (V)
T
J
= 25 °C
TOP 15 V
14 V
13 V
12 V
11 V
10 V
9 V
8 V
7 V
6 V
BOTTOM 5 V
0
15
30
45
60
75
0 5 10 15 20
I
D
, Drain-to-Source Current (A)
V
DS
, Drain-to-Source Voltage (V)
T
J
= 150 °C
TOP 15 V
14 V
13 V
12 V
11 V
10 V
9 V
8 V
7 V
6 V
BOTTOM 5 V
0
30
60
90
120
0 5 10 15 20
I
D
, Drain-to-Source Current (A)
V
GS
, Gate-to-Source Voltage (V)
T
J
= 150 °C
T
J
= 25 °C
V
DS
= 27.4 V
0
0.5
1.0
1.5
2.0
2.5
-60 -40 -20 0 20 40 60 80 100 120 140 160
R
DS(on)
, Drain-to-Source On-Resistance
(Normalized)
T
J
, Junction Temperature (°C)
I
D
= 15 A
V
GS
= 10 V
0.01
0.1
1
10
100
1000
10 000
100 000
0 100 200 300 400 500 600
C, Capacitance (pF)
V
DS
, Drain-to-Source Voltage (V)
C
iss
C
oss
C
rss
V
GS
= 0 V, f = 1MHz
C
iss
= C
gs
+ C
gd
, C
ds
shorted
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
0
2
4
6
8
10
12
14
16
18
20
10
100
1000
10 000
0 100 200 300 400 500 600
E
oss
(μJ)
C
oss
(pF)
V
DS
C
oss
E
oss