Datasheet
SiHH068N60E
www.vishay.com
Vishay Siliconix
S18-0934-Rev. B, 17-Sep-2018
1
Document Number: 92121
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
E Series Power MOSFET
FEATURES
•4
th
generation E series technology
• Low figure-of-merit (FOM) R
on
x Q
g
• Low effective capacitance (C
o(er)
)
• Reduced switching and conduction losses
• Avalanche energy rated (UIS)
• Kelvin connection for reduced gate noise
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Server and telecom power supplies
• Switch mode power supplies (SMPS)
• Power factor correction power supplies (PFC)
• Lighting
- High-intensity discharge (HID)
- Fluorescent ballast lighting
• Industrial
- Welding
- Induction heating
- Motor drives
- Battery chargers
- Solar (PV inverters)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature
b. V
DD
= 140 V, starting T
J
= 25 °C, L = 28.2 mH, R
g
= 25 , I
AS
= 4.0 A
c. I
SD
I
D
, di/dt = 100 A/μs, starting T
J
= 25 °C
PRODUCT SUMMARY
V
DS
(V) at T
J
max. 650
R
DS(on)
typ. () at 25 °C V
GS
= 10 V 0.059
Q
g
max. (nC) 80
Q
gs
(nC) 17
Q
gd
(nC) 20
Configuration Single
Pin 3: source
Pin 4: drain
Pin 1:
gate
Pin 2:
Kelvin connection
N-Channel MOSFET
PowerPAK
®
8 x 8
1
2
3
3
4
ORDERING INFORMATION
Package PowerPAK 8 x 8
Lead (Pb)-free and halogen-free SiHH068N60E-T1-GE3
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-source voltage V
DS
600
V
Gate-source voltage V
GS
± 30
Continuous drain current (T
J
= 150 °C) V
GS
at 10 V
T
C
= 25 °C
I
D
34
AT
C
= 100 °C 22
Pulsed drain current
a
I
DM
100
Linear derating factor 1.6 W/°C
Single pulse avalanche energy
b
E
AS
226 mJ
Maximum power dissipation P
D
202 W
Operating junction and storage temperature range T
J
, T
stg
-55 to +150 °C
Drain-source voltage slope T
J
= 125 °C
dv/dt
70
V/ns
Reverse diode dv/dt
c
50