Datasheet

SiHG47N60E
www.vishay.com
Vishay Siliconix
S15-0399-Rev. K, 16-Mar-15
4
Document Number: 91474
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Fig. 7 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 8 - Typical Source-Drain Diode Forward Voltage
Fig. 9 - Maximum Safe Operating Area
Fig. 10 - Maximum Drain Current vs. Case Temperature
Fig. 11 - Temperature vs. Drain-to-Source Voltage
0
4
8
12
16
20
24
0 50 100 150 200 250 300
V = 120 V
DS
V = 300 V
DS
V = 480 V
DS
V
GS
, Gate-to-Source Voltage (V)
Q
g
, Total Gate Charge (nC)
0.1
1
10
100
1000
0.2 0.4 0.6 0.8 1 1.2 1.4
V = 0 V
GS
T = 25 °C
J
T = 150 °C
J
I
SD
, Reverse Drain Current (A)
V
SD
, Source-Drain Voltage (V)
1000
1
10
100
1
10 100
1000
0.1
BVDSS Limited
I
DM
Limited
Operation in this area limited
by R
DS(on)
*
T
C
= 25 °C
T
J
= 150 °C
Single Pulse
100 µs
1 ms
10 ms
I
D
, Drain Current (A)
V
DS
, Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specied
5
10
15
20
25
30
35
40
45
25 50 75 100 125 150
0
50
I
D
, Drain Current (A)
T
C
, Case Temperature (°C)
550
575
600
625
650
675
700
725
- 60 - 40 - 20 0 20 40 60 80 100 120 140 160
V
DS
, Drain-to-Source Breakdown Voltage (V)
T
J
, Junction Temperature (°C)