Datasheet
SiHG47N60E
www.vishay.com
Vishay Siliconix
S15-0399-Rev. K, 16-Mar-15
3
Document Number: 91474
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Fig. 1 - Typical Output Characteristics, T
C
= 25 °C
Fig. 2 - Typical Output Characteristics, T
C
= 150 °C
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - C
oss
and E
oss
vs. V
DS
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
0
20
40
60
80
100
120
140
160
180
0 5 10 15 20 25 30
Top 15 V
14 V
13 V
12 V
11 V
10 V
9.0 V
8.0 V
7.0 V
6.0 V
T
J
= 25 °C
5.0 V
Bottom 5.0 V
0 5 10 15 20 25 30
0
20
40
60
80
100
120
Top 15 V
14 V
13 V
12 V
11 V
10 V
9.0 V
8.0 V
7.0 V
6.0 V
Bottom 5.0 V
T
J
= 150 °C
I
D
, Drain-to-Source Current (A)
V
DS
, Drain-to-Source Voltage (V)
0
20
40
60
80
100
120
140
160
180
0 5 10 15 20 25
T = 150 °C
J
T = 25 °C
J
I
D
, Drain-to-Source Current (A)
V
GS
, Gate-to-Source Voltage (V)
- 60 - 40 - 20 0 20 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V =
I =
GS
D
10 V
24 A
R
DS(on)
, Drain-to-Source On-Resistance
(Normalized)
T
J
, Junction Temperature (°C)
1
10
100
1000
10 000
C, Capacitance (pF)
DS
V , Drain-to-Source Voltage (V)
0 100 200 300 400 500 600
V
GS
= 0 V, f = 1 MHz
C
iss
= C
gs
+ C
gd
, C
ds
Shorted
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
100 000
C
iss
C
oss
C
rss
0
5
10
15
20
25
30
35
50
500
5000
0 100 200 300 400 500 600
E
oss
(μJ)
C
oss
(pF)
V
DS
C
oss
E
oss