Datasheet

Document Number: 91382 www.vishay.com
S11-0440-Rev. C, 14-Mar-11 3
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiHG20N50C
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Fig. 1 - Typical Output Characteristics, T
C
= 25 °C
Fig. 2 - Typical Output Characteristics, T
C
= 150 °C
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
V
DS
, Drain-to-Source Voltage (V)
I
D
, Drain Current (A)
0
10
20
30
40
50
60
70
0612 18 24 30
7.0 V
Bottom
To p
V
GS
15 V
14 V
13 V
12 V
11 V
10 V
9.0 V
8.0 V
7.0 V
6.0 V
5.0 V
T
J
= 25 °C
0
10
20
30
40
0 6 12 18 24 30
7.0 V
V
DS
, Drain-to-Source Voltage (V)
I
D
, Drain Current (A)
Bottom
To p
V
GS
15 V
14 V
13 V
12 V
11 V
10 V
9.0 V
8.0 V
7.0 V
6.0 V
5.0 V
T
J
= 150 °C
I
D
, Drain Current (A)
V
GS
,
Gate-to-Source Voltage (V)
0.01
0.1
1
10
100
5678910
T
J
= 150 °C
T
J
= 25 °C
T
J
,
Junction Temperature (°C)
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
0
0.5
1
1.5
2
2.5
3
- 60 - 40 - 20 0 20 40 60 80 100 120 140 160
I
D
= 17 A
V
GS
= 10 V