Datasheet
www.vishay.com Document Number: 91382
2 S11-0440-Rev. C, 14-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiHG20N50C
Vishay Siliconix
The information shown here is a preliminary product proposal, not a commercial product datasheet. Vishay Siliconix is not committed to produce this or any similar
product. This information should not be used for design purposes, nor construed as an offer to furnish or sell such products.
SPECIFICATIONS (T
J
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
DS
V
GS
= 0 V, I
D
= 250 μA 500 - - V
V
DS
Temperature Coefficient
ΔV
DS
/T
J
Reference to 25 °C, I
D
= 1 mA
-700-
mV/°C
Gate-Source Threshold Voltage (N) V
GS(th)
V
DS
= V
GS
, I
D
= 250 μA 3.0 - 5.0 V
Gate-Source Leakage I
GSS
V
GS
= ± 30 V - - ± 100 nA
Zero Gate Voltage Drain Current I
DSS
V
DS
= 500 V, V
GS
= 0 V - - 25
μA
V
DS
= 400 V, V
GS
= 0 V, T
J
= 125 °C - - 250
Drain-Source On-State Resistance R
DS(on)
V
GS
= 10 V I
D
= 10 A - 0.225 0.270 Ω
Forward Transconductance g
fs
V
DS
= 50 V, I
D
= 10 A - 6.4 - S
Dynamic
Input Capacitance C
iss
V
GS
= 0 V,
V
DS
= 25 V,
f = 1.0 MHz
- 2451 2942
pF
Output Capacitance C
oss
- 300 360
Reverse Transfer Capacitance C
rss
-2632
Total Gate Charge Q
g
V
GS
= 10 V I
D
= 18 A, V
DS
= 400 V
-6576
nC Gate-Source Charge Q
gs
-21-
Gate-Drain Charge Q
gd
-29-
Turn-On Delay Time t
d(on)
V
DD
= 250 V, I
D
= 18 A,
R
g
= 9.1 Ω
-80-
ns
Rise Time t
r
-27-
Turn-Off Delay Time t
d(off)
-32-
Fall Time t
f
-44-
Gate Input Resistance R
g
f = 1 MHz, open drain - 1.1 - Ω
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
S
MOSFET symbol
showing the
integral reverse
p - n junction diode
--20
A
Pulsed Diode Forward Current I
SM
--80
Body Diode Voltage V
SD
T
J
= 25 °C, I
S
= 18 A, V
GS
= 0 V - - 1.5 V
Body Diode Reverse Recovery Time t
rr
T
J
= 25 °C, I
F
= I
S
,
dI/dt = 100 A/μs, V = 35 V
-503-ns
Body Diode Reverse Recovery Charge Q
rr
-6.7-μC
Reverse Recovery Current I
RRM
-30-A
S
D
G