Datasheet

SiHD2N80AE
www.vishay.com
Vishay Siliconix
S19-0120-Rev. A, 04-Feb-2019
2
Document Number: 92238
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Notes
a. C
oss(er)
is a fixed capacitance that gives the same energy as C
oss
while V
DS
is rising from 0 V to 480 V V
DSS
b. C
oss(tr)
is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 V to 480 V V
DSS
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum junction-to-ambient R
thJA
-62
°C/W
Maximum junction-to-case (drain) R
thJC
-2.0
SPECIFICATIONS (T
J
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-source breakdown voltage V
DS
V
GS
= 0 V, I
D
= 250 μA 800 - - V
V
DS
temperature coefficient V
DS
/T
J
Reference to 25 °C, I
D
= 1 mA - 0.8 - V/°C
Gate-source threshold voltage (N) V
GS(th)
V
DS
= V
GS
, I
D
= 250 μA 2.0 - 4.0 V
Gate-source leakage I
GSS
V
GS
= ± 20 V - - ± 10
μA
V
GS
= ± 30 V - - ± 50
Zero gate voltage drain current I
DSS
V
DS
= 800 V, V
GS
= 0 V - - 1
μA
V
DS
= 640 V, V
GS
= 0 V, T
J
= 125 °C - - 10
Drain-source on-state resistance R
DS(on)
V
GS
= 10 V I
D
= 0.5 A - 2.5 2.9 
Forward transconductance
a
g
fs
V
DS
= 30 V, I
D
= 1 A - 0.6 - S
Dynamic
Input capacitance C
iss
V
GS
= 0 V,
V
DS
= 100 V,
f = 1 MHz
- 180 -
pF
Output capacitance C
oss
-10-
Reverse transfer capacitance C
rss
-1-
Effective output capacitance, energy
related
a
C
o(er)
V
DS
= 0 V to 480 V, V
GS
= 0 V
-7-
Effective output capacitance, time 
related
b
C
o(tr)
-42-
Total gate charge Q
g
V
GS
= 10 V I
D
= 1.5 A, V
DS
= 640 V
- 7 10.5
nC Gate-source charge Q
gs
-3-
Gate-drain charge Q
gd
-2-
Turn-on delay time t
d(on)
V
DD
= 640 V, I
D
= 1.5 A,
V
GS
= 10 V, R
g
= 4.7 
-1326
ns
Rise time t
r
-816
Turn-off delay time t
d(off)
-1020
Fall time t
f
-2346
Gate input resistance R
g
f = 1 MHz, open drain 2.0 5.2 10.4 
Drain-Source Body Diode Characteristics
Continuous source-drain diode current I
S
MOSFET symbol
showing the 
integral reverse
p - n junction diode
--2.9
A
Pulsed diode forward current I
SM
--3.6
Diode forward voltage V
SD
T
J
= 25 °C, I
S
= 1 A, V
GS
= 0 V - - 1.2 V
Reverse recovery time t
rr
T
J
= 25 °C, I
F
= I
S
= 1 A,
di/dt = 100 A/μs, V
R
= 25 V
- 313 626 ns
Reverse recovery charge Q
rr
-0.71.4μC
Reverse recovery current I
RRM
-3.8-A
S
D
G