Datasheet
SiHB30N60E
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Vishay Siliconix
S12-3103-Rev. E, 24-Dec-12
4
Document Number: 91453
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Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 8 - Maximum Safe Operating Area
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 10 - Temperature vs. Drain-to-Source Voltage
Fig. 11 - Normalized Thermal Transient Impedance, Junction-to-Case
0.001
0.01
0.1
1
10
100
1000
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
I
S
- Source Current (A)
V
SD
- Source-to-Drain Voltage (V)
T
J
= 150 °C
T
J
= 25 °C
V
DS
, Drain-to-Source Voltage (V)
I
D
, Drain Current (A)
0.1
1
10
100
1000
0.1 1 10 1000
* V
GS
> minimum V
GS
at which R
DS(on)
is specied
Operation in this area
limited by R
DS(on)
BVDSS Limited
T
C
= 25 °C
T
J
= 150 °C
Single Pulse
100 μs
1 ms
10 ms
100
I
DM
Limited
5.0
10.0
15.0
20.0
25.0
30.0
25 50 75 100 125 150
I
D
, Drain Current (A)
T
C
-Temperature (°C)
0
V
DS
, Drain-to-Source Breakdown
Voltage (V)
T
J
-Temperature (°C)
550
575
600
625
650
675
700
725
-
60
-
40
-
20 0
20 40 60 80 100 120 140 160
0.01
0.1
1
0.0001 0.001 0.01 0.1 1
Normalized Effective Transient
Thermal Impedance
Square Wave Pulse Duration (s)
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse