Datasheet

SiHB30N60E
www.vishay.com
Vishay Siliconix
S12-3103-Rev. E, 24-Dec-12
3
Document Number: 91453
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Fig. 1 - Typical Output Characteristics, T
C
= 25 °C
Fig. 2 - Typical Output Characteristics, T
C
= 150 °C
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
0
10
20
30
40
50
60
70
80
0 5 10 15 20 25 30
I
D
- Drain Current (A)
V
DS
-Drain-to-Source Voltage (V)
TOP 15 V
14 V
13 V
12 V
11 V
10 V
9.0 V
8.0 V
7.0 V
6.0 V
BOTTOM 5.0 V
5 V
T
J
= 25 °C
0
10
20
30
40
50
0 5 10 15 20 25 30
I
D
- Drain Current (A)
V
DS
-Drain-to-Source Voltage (V)
TOP 15 V
14 V
13 V
12 V
11 V
10 V
9.0 V
8.0 V
7.0 V
6.0 V
BOTTOM 5.0 V
T
J
= 150 °C
I
D
, Drain Current (A)
V
GS
, Gate-to-Source Voltage (V)
0
20
40
80
0 5 10 15 20 25
T
J
= 150 °C
T
J
= 25 °C
60
0.0
0.5
1.0
1.5
2.0
2.5
3.0
- 60 - 40 - 20 0 20 40 60 80 100 120 140 160
R
DS(on)
-On-Resistance
(Normalized)
T
J
- Junction Temperature (°C)
I
D
= 15 A
V
GS
= 10 V
C - Capacitance (pF)
V
DS
- Drain-to-Source Voltage (V)
1
10
100
1000
10 000
0 100 200 300 400 500 600
V
GS
= 0 V, f = 1 MHz
C
iss
= C
gs
+ C
gd
x C
ds
shorted
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
C
iss
C
rss
C
oss
0
4
8
12
16
20
24
0 25 50 75 100 125 150
V
GS
- Gate-to-Source Voltage (V)
Q
g
-Total Gate Charge (nC)
V
DS
= 480 V
I
D
= 15 A
V
DS
= 300 V
V
DS
= 120 V