Datasheet

SiHA100N60E
www.vishay.com
Vishay Siliconix
S18-1219-Rev. A, 10-Dec-2018
2
Document Number: 92199
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Notes
a. C
oss(er)
is a fixed capacitance that gives the same energy as C
oss
while V
DS
is rising from 0 % to 80 % V
DSS
b. C
oss(tr)
is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 % to 80 % V
DSS
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum junction-to-ambient R
thJA
-65
°C/W
Maximum junction-to-case (drain) R
thJC
-3.6
SPECIFICATIONS (T
J
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-source breakdown voltage V
DS
V
GS
= 0 V, I
D
= 250 μA 600 - - V
V
DS
temperature coefficient V
DS
/T
J
Reference to 25 °C, I
D
= 1 mA - 0.73 - V/°C
Gate-source threshold voltage (N) V
GS(th)
V
DS
= V
GS
, I
D
= 250 μA 3.0 - 5.0 V
Gate-source leakage I
GSS
V
GS
= ± 20 V - - ± 100 nA
V
GS
= ± 30 V - - ± 1 μA
Zero gate voltage drain current I
DSS
V
DS
= 600 V, V
GS
= 0 V - - 1
μA
V
DS
= 480 V, V
GS
= 0 V, T
J
= 125 °C - - 10
Drain-source on-state resistance R
DS(on)
V
GS
= 10 V I
D
= 13 A - 0.086 0.1 
Forward transconductance
a
g
fs
V
DS
= 8 V, I
D
= 13 A - 11 - S
Dynamic
Input capacitance C
iss
V
GS
= 0 V,
V
DS
= 100 V,
f = 1 MHz
- 1851 -
pF
Output capacitance C
oss
-84-
Reverse transfer capacitance C
rss
-5-
Effective output capacitance, energy
related
a
C
o(er)
V
DS
= 0 V to 480 V, V
GS
= 0 V
-64-
Effective output capacitance, time 
related
b
C
o(tr)
- 407 -
Total gate charge Q
g
V
GS
= 10 V I
D
= 13 A, V
DS
= 480 V
-3350
nC Gate-source charge Q
gs
-13-
Gate-drain charge Q
gd
-10-
Turn-on delay time t
d(on)
V
DD
= 480 V, I
D
= 13 A,
V
GS
= 10 V, R
g
= 9.1 
-2142
ns
Rise time t
r
-3468
Turn-off delay time t
d(off)
-3366
Fall time t
f
-2040
Gate input resistance R
g
f = 1 MHz, open drain 0.3 0.7 1.4 
Drain-Source Body Diode Characteristics
Continuous source-drain diode current I
S
MOSFET symbol
showing the 
integral reverse
p - n junction diode
--30
A
Pulsed diode forward current I
SM
--73
Diode forward voltage V
SD
T
J
= 25 °C, I
S
= 13 A, V
GS
= 0 V - - 1.2 V
Reverse recovery time t
rr
T
J
= 25 °C, I
F
= I
S
= 13 A,
di/dt = 100 A/μs, V
R
= 25 V
- 358 716 ns
Reverse recovery charge Q
rr
- 5.1 10.2 μC
Reverse recovery current I
RRM
-24-A
S
D
G