Datasheet

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Document Number: 67038
S11-0649-Rev. B, 11-Apr-11
Vishay Siliconix
SiA429DJT
New Product
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Soure-Drain Diode Forward Voltage
Threshold Voltage
0.1
1
10
100
0.0 0.2 0.4 0.6 0.8 1.0 1.2
T
J
= 25 °C
T
J
= 150 °C
V
SD
- Source-to-Drain Voltage (V)
I
S
- Source Current (A)
0.2
0.3
0.4
0.5
0.6
0.7
0.8
- 50 - 25 0 25 50 75 100 125 150
I
D
= 250 μA
V
GS(th)
(V)
T
J
- Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
0.01
0.02
0.03
0.04
0.05
0.06
012345
I
D
=6A;T
J
= 25 °C
I
D
=1A;T
J
= 125 °C
I
D
=6A;T
J
= 125 °C
I
D
=1A;T
J
= 25 °C
R
DS(on)
- On-Resistance (Ω)
V
GS
- Gate-to-Source Voltage (V)
Power (W)
Time (s)
10 10000.10.010.001 1001
0
5
10
15
20
25
30
Safe Operating Area, Junction-to-Ambient
100
1
0.1 1 10 100
0.01
10
0.1
T
A
=25 °C
Single Pulse
1s,10s
Limited by R
DS(on)
*
BVDSS Limited
1ms
100 μs
10 ms
DC
100 ms
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specied
I
D
- Drain Current (A)