Datasheet

Document Number: 67038
S11-0649-Rev. B, 11-Apr-11
www.vishay.com
3
Vishay Siliconix
SiA429DJT
New Product
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Output Characteristics
On-Resistance vs. Drain Current and Gate Voltage
Gate Charge
0
5
10
15
20
25
30
0.0 0.5 1.0 1.5 2.0 2.5 3.0
V
GS
=5Vthru2V
V
GS
=1V
V
GS
=1.5V
V
DS
- Drain-to-Source Voltage (V)
I
D
- Drain Current (A)
0
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.08
0 5 10 15 20 25 30
V
GS
=4.5V
V
GS
=1.5V
V
GS
=1.8V
V
GS
=2.5V
R
DS(on)
- On-Resistance (Ω)
I
D
- Drain Current (A)
0
2
4
6
8
0 1020304050
I
D
=10A
V
DS
=5V
V
DS
=10V
V
DS
=16V
Q
g
- Total Gate Charge (nC)
V
GS
- Gate-to-Source Voltage (V)
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0
4
8
12
16
20
0.0 0.4 0.8 1.2 1.6 2.0
T
C
= 125 °C
T
C
= 25 °C
T
C
= - 55 °C
V
GS
- Gate-to-Source Voltage (V)
I
D
- Drain Current (A)
C
rss
0
500
1000
1500
2000
2500
3000
3500
0 5 10 15 20
C
iss
C
oss
V
DS
- Drain-to-Source Voltage (V)
C - Capacitance (pF)
0.65
0.85
1.05
1.25
1.45
1.65
- 50 - 25 0 25 50 75 100 125 150
V
GS
=1.8V;I
D
=6A
V
GS
=4.5V;2.5V;I
D
=6A
V
GS
=1.5V;I
D
=1A
T
J
- Junction Temperature (°C)
(Normalized)
R
DS(on)
- On-Resistance