Datasheet
Document Number: 63649
S12-2438-Rev. B, 15-Oct-12
www.vishay.com
3
Vishay Siliconix
SiA416DJ
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact: pmostechsupport@vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Output Characteristics
On-Resistance vs. Drain Current and Gate Voltage
Gate Charge
0
4
8
12
16
20
0.0 0.5 1.0 1.5 2.0 2.5 3.0
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
V
GS
= 4 V
V
GS
= 5 V
V
GS
= 10 V thru 6 V
V
GS
= 3 V
0
0.04
0.08
0.12
0.16
0.20
0 3 6 9 12 15
R
DS(on)
- On-Resistance (Ω)
I
D
- Drain Current (A)
V
GS
= 4.5 V
V
GS
= 10 V
0
2
4
6
8
10
0 2 4 6 8
V
GS
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
DS
= 80 V
V
DS
= 25 V
V
DS
= 50 V
I
D
= 4.8 A
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0
2
4
6
8
10
0 1 2 3 4 5
I
D
- Drain Current (A)
V
GS
- Gate-to-Source Voltage (V)
T
C
= 25 °C
T
C
= 125 °C
T
C
= - 55 °C
0
100
200
300
400
500
0 5 10 15 20 25 30
C - Capacitance (pF)
V
DS
- Drain-to-Source Voltage (V)
C
iss
C
oss
C
rss
0.6
0.8
1.0
1.2
1.4
1.6
1.8
- 50 - 25 0 25 50 75 100 125 150
R
DS(on)
- On-Resistance (Normalized)
T
J
- Junction Temperature (°C)
V
GS
= 4.5 V
I
D
= 3.2 A
V
GS
= 10 V