Datasheet

Vishay Siliconix
SiA416DJ
Document Number: 63649
S12-2438-Rev. B, 15-Oct-12
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact: pmostechsupport@vishay.com
N-Channel 100 V (D-S) MOSFET
FEATURES
TrenchFET
®
Power MOSFET
100 % R
g
and UIS Tested
Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
DC/DC Converters
Full-Bridge Converters
For Power Bricks and POL Power
Notes:
a. Based on T
C
= 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See solder profile (www.vishay.com/doc?73257
). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 80 °C/W.
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
() Max.
I
D
(A)
a
Q
g
(Typ.)
100
0.083 at V
GS
= 10 V
11.3
3.5 nC
0.130 at V
GS
= 4.5 V
9
Ordering Information:
SiA416DJ-T1-GE3 (Lead (Pb)-free and Halogen-free)
Bottom View
PowerPAK SC-70-6L-Single
6
5
4
1
2
3
D
D
D
D
G
S
S
2.05 mm
2.05 mm
N-Channel MOSFET
G
D
S
Marking Code
X X X
A R X
Lot Traceability
and Date code
Part # code
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C, unless otherwise noted)
Parameter Symbol Limit Unit
Drain-Source Voltage
V
DS
100
V
Gate-Source Voltage
V
GS
± 20
Continuous Drain Current (T
J
= 150 °C)
T
C
= 25 °C
I
D
11.3
A
T
C
= 70 °C
9
T
A
= 25 °C
4.8
b, c
T
A
= 70 °C
3.9
b, c
Pulsed Drain Current (t = 300 µs)
I
DM
15
Continuous Source-Drain Diode Current
T
C
= 25 °C
I
S
12
T
A
= 25 °C
2.9
b, c
Single Pulse Avalanche Current
L =0.1 mH
I
AS
3
Single Pulse Avalanche Energy
E
AS
0.45 mJ
Maximum Power Dissipation
T
C
= 25 °C
P
D
19
W
T
C
= 70 °C
12
T
A
= 25 °C
3.5
b, c
T
A
= 70 °C
2.2
b, c
Operating Junction and Storage Temperature Range
T
J
, T
stg
- 55 to 150
°C
Soldering Recommendations (Peak Temperature)
d, e
260
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient
b, f
t 5 s
R
thJA
28 36
°C/W
Maximum Junction-to-Case (Drain)
Steady State
R
thJC
5.3 6.5

Summary of content (9 pages)