Datasheet

Document Number: 68791
S-81729-Rev. A, 04-Aug-08
www.vishay.com
3
Vishay Siliconix
Si9933CDY
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Output Characteristics
On-Resistance vs. Drain Current and Gate Voltage
Gate Charge
0
4
8
12
16
20
012345
V
DS
- Drain-to-Source Voltage (V)
- Drain Current (A)I
D
V
GS
=5thru 3.5 V
V
GS
=1.5V
V
GS
=2V
V
GS
=2.5V
V
GS
=3V
0.00
0.04
0.08
0.12
0.16
0 5 10 15 20
- On-Resistance (Ω)R
DS(on)
I
D
- Drain Current (A)
V
GS
=4.5V
V
GS
=2.5V
0
2
4
6
8
10
0 3 6 9 121518
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
V
DS
=16V
V
DS
=10V
I
D
=4.8 A
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0.0 0.5 1.0 1.5 2.0 2.5
V
GS
- Gate-to-Source Voltage (V)
- Drain Current (A)I
D
T
C
= 25 °C
T
C
= 125 °C
T
C
= - 55 °C
0
300
600
900
1200
04
8 12 16 20
C
iss
V
DS
- Drain-to-Source Voltage (V)
C - Capacitance (pF)
C
oss
C
rss
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
- 50 - 25 0 25 50 75 100 125 150
T
J
-Junction Temperature (°C)
(Normalized)
- On-Resistance
R
DS(on)
V
GS
= - 4.5 V;I
D
= - 4.8 A
V
GS
= - 2.5 V;I
D
= - 3.8 A
I
D
=20A