Datasheet

Vishay Siliconix
Si9933CDY
New Product
Document Number: 68791
S-81729-Rev. A, 04-Aug-08
www.vishay.com
1
Dual P-Channel 20-V (D-S) MOSFET
FEATURES
• Halogen-free Option Available
•TrenchFET
®
Power MOSFET
• 100 % R
g
and UIS Tested
APPLICATIONS
• Load Switch
• DC/DC Converter
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
(Ω)
I
D
(A)
a, e
Q
g
(Typ.)
- 20
0.058 at V
GS
= - 4.5 V - 4
8
0.094 at V
GS
= - 2.5 V - 4
Notes:
a. Based on T
C
= 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 110 °C/W.
e. Package Limited.
ABSOLUTE MAXIMUM RATINGS T
A
= 25 °C, unless otherwise noted
Parameter Symbol Limit Unit
Drain-Source Voltage
V
DS
- 20
V
Gate-Source Voltage
V
GS
± 12
Continuous Drain Current (T
J
= 150 °C)
T
C
= 25 °C
I
D
- 4
e
A
T
C
= 70 °C - 4
e
T
A
= 25 °C
- 4
b, c, e
T
A
= 70 °C
- 3.8
b, c
Pulsed Drain Current (10 µs Pulse Width)
I
DM
- 20
Source-Drain Current Diode Current
T
C
= 25 °C
I
S
- 2.5
T
A
= 25 °C
- 1.7
b, c
Single Pulse Avalanche Current
L = 0.1 mH
I
AS
- 6
Single-Pulse Avalanche Energy
E
AS
1.8 mJ
Maximum Power Dissipation
T
C
= 25 °C
P
D
3.1
W
T
C
= 70 °C 2
T
A
= 25 °C
2
b, c
T
A
= 70 °C
1.28
b, c
Operating Junction and Storage Temperature Range
T
J
, T
stg
- 50 to 150 °C
S
1
G
1
D
1
P-Channel MOSFET
S
2
G
2
D
2
P-Channel MOSFET
S
1
D
1
G
1
D
1
S
2
D
2
G
2
D
2
SO-8
5
6
7
8
Top View
2
3
4
1
Ordering Information: Si9933CDY-T1-E3 (Lead (Pb)-free)
Si9933CDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
THERMAL RESISTANCE RATINGS
Limit
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient
b, d
t ≤ 10 s
R
thJA
52 62.5
°C/W
Maximum Junction-to-Foot (Drain)
Steady State
R
thJF
32 40
RoHS
COMPLIANT