Datasheet

Document Number: 72245
S09-0870-Rev. D, 18-May-09
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3
Vishay Siliconix
Si9435BDY
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Output Characteristics
On-Resistance vs. Drain Current
Gate Charge
0
5
10
15
20
25
30
012345
V
GS
= 10 V thru 6 V
V
DS
- Drain-to-Source Voltage (V)
I
D
- Drain Current (A)
3 V
5 V
4 V
R
DS(on)
- On-Resistance (Ω)
0.00
0.03
0.06
0.09
0.12
0.15
048121620
I
D
- Drain Current (A)
V
GS
= 6 V
V
GS
= 4.5 V
V
GS
= 10 V
0
2
4
6
8
10
0.0 3.2 6.4 9.6 12.8 16.0
V
DS
= 15 V
I
D
= 3.5 A
V
GS
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0
5
10
15
20
25
30
012345
T
C
= 125 °C
- 55 °C
25 °C
V
GS
- Gate-to-Source V
oltage (V)
I
D
- Drain Current (A)
0
220
440
660
880
1100
0 5 10 15 20 25 30
V
DS
- Drain-to-Source Voltage (V)
C
rss
C - Capacitance (pF)
C
oss
C
iss
0.6
0.8
1.0
1.2
1.4
1.6
- 50 - 25 0 25 50 75 100 125 150
V
GS
= 10 V
I
D
= 5.7 A
T
J
- Junction Temperature (°C)
R
DS(on)
- On-Resistance
(Normalized)