Datasheet

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Document Number: 72245
S09-0870-Rev. D, 18-May-09
Vishay Siliconix
Si9435BDY
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS T
J
= 25 °C, unless otherwise noted
Parameter Symbol Test Conditions Min. Typ.
a
Max. Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= - 250 µA
- 1.0 - 3.0 V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
= ± 20 V
± 100 nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= - 30 V, V
GS
= 0 V
- 1
µA
V
DS
= - 30 V, V
GS
= 0 V, T
J
= 70 °C
- 5
On-State Drain Current
b
I
D(on)
V
DS
≤ - 10 V, V
GS
= - 10 V
- 20
A
V
DS
≤ - 5 V, V
GS
= - 4.5 V
- 5
Drain-Source On-State Resistance
b
R
DS(on)
V
GS
= - 10 V, I
D
= - 5.7 A
0.033 0.042
Ω
V
GS
= - 6 V, I
D
= - 5 A
0.043 0.055
V
GS
= - 4.5 V, I
D
= - 4.4 A
0.056 0.070
Forward Transconductance
b
g
fs
V
DS
= - 15 V, I
D
= - 5.7 A
13 S
Diode Forward Voltage
b
V
SD
I
S
= - 2.3 A, V
GS
= 0 V
- 0.8 - 1.1 V
Dynamic
a
Total Gate Charge
Q
g
V
DS
= - 15 V, V
GS
= - 10 V, I
D
= - 3.5 A
16 24
nCGate-Source Charge
Q
gs
2.3
Gate-Drain Charge
Q
gd
4.5
Gate Resistance
R
g
8.8 Ω
Tur n - O n D e l ay Time
t
d(on)
V
DD
= - 15 V, R
L
= 15 Ω
I
D
≅ - 1 A, V
GEN
= - 10 V, R
g
= 6 Ω
14 25
ns
Rise Time
t
r
14 25
Turn-Off Delay Time
t
d(off)
42 70
Fall Time
t
f
30 50
Source-Drain Reverse Recovery Time
t
rr
I
F
= - 1.2 A, dI/dt = 100 A/µs
30 60