Datasheet

Vishay Siliconix
Si9433BDY
Document Number: 72755
S09-0870-Rev. B, 18-May-09
www.vishay.com
1
P-Channel 20-V (D-S) MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• Compliant to RoHS Directive 2002/95/EC
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
(Ω)I
D
(A)
- 20
0.040 at V
GS
= - 4.5 V
- 6.2
0.060 at V
GS
= - 2.7 V
- 5.0
SD
SD
S
D
G
D
SO-8
5
6
7
8
Top View
2
3
4
1
Ordering Information: Si9433BDY-T1-E3 (Lead (Pb)-free)
Si9433BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
S
G
D
P-Channel MOSFET
Notes:
a. Surface Mounted on FR4 board, t ≤ 10 s.
ABSOLUTE MAXIMUM RATINGS T
A
= 25 °C, unless otherwise noted
Parameter Symbol 10 s Steady State Unit
Drain-Source Voltage
V
DS
- 20
V
Gate-Source Voltage
V
GS
± 12
Continuous Drain Current (T
J
= 150 °C)
a
T
A
= 25 °C
I
D
- 6.2 - 4.5
A
T
A
= 70 °C
- 5.0 - 3.5
Pulsed Drain Current
I
DM
- 20
Continuous Source Current (Diode Conduction)
a
I
S
- 2.3 - 1.2
Maximum Power Dissipation
a
T
A
= 25 °C
P
D
2.5 1.3
W
T
A
= 70 °C
1.6 0.8
Operating Junction and Storage Temperature Range
T
J
, T
stg
- 55 to 150 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient
a
t ≤ 10 s
R
thJA
45 50
°C/W
Steady State 80 95
Maximum Junction-to-Foot (Drain) Steady State
R
thJF
20 24