Datasheet

Document Number: 62752
S12-1763-Rev. A, 23-Jul-12
www.vishay.com
5
Vishay Siliconix
Si8489EDB
This document is subject to change without notice.
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Note:
When mounted on 1" x 1" FR4 with full copper.
* The power dissipation P
D
is based on T
J(max.)
= 150 °C, using
junction-to-case thermal resistance, and is more useful in settling the
upper dissipation limit for cases where additional heatsinking is
used. It is used to determine the current rating, when this rating falls
below the package limit.
On-Resistance vs. Gate-to-Source Voltage
Safe Operating Area, Junction-to-Ambient
Current Derating*
0.00
0.05
0.10
0.15
0.20
012345
R
DS(on)
- On-Resistance (Ω)
V
GS
- Gate-to-Source Voltage (V)
T
J
= 125 °C
T
J
= 25 °C
I
D
= 1.5 A
0.01
0.1
1
10
100
0.1 1 10 100
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specied
10 s, 1s
100 ms
100 µs
Limited by R
DS(on)
*
1 ms
T
A
= 25 °C
BVDSS Limited
10 ms
DC
0
1
2
3
4
5
0 25 50 75 100 125 150
I
D
- Drain Current (A)
T
A
- Ambient Temperature (°C)
Single Pulse Power, Junction-to-Ambient
Power Derating
0
5
10
15
20
25
Power (W)
Time (s)
10 10000.10.010.001 1001
0.0
0.3
0.6
0.9
1.2
1.5
25 50 75 100 125 150
T
A
-Ambient Temperature (°C)
Power Dissipation (W)