Datasheet

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Document Number: 62752
S12-1763-Rev. A, 23-Jul-12
Vishay Siliconix
Si8489EDB
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
On-Resistance vs. Drain Current and Gate Voltage
Gate Charge
On-Resistance vs. Junction Temperature
0.00
0.05
0.10
0.15
0.20
0 4 8 12 16 20
R
DS(on)
- On-Resistance (Ω)
I
D
- Drain Current (A)
V
GS
= 2.5 V
V
GS
= 4.5 V
V
GS
= 10 V
0
2
4
6
8
10
0 4 8 12 16 20
V
GS
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
DS
= 16 V
V
DS
= 10 V
V
DS
= 5 V
I
D
= 1.5 A
0.8
0.9
1.0
1.1
1.2
1.3
1.4
- 50 - 25 0 25 50 75 100 125 150
R
DS(on)
- On-Resistance (Normalized)
T
J
- Junction Temperature (°C)
V
GS
= 10 V, I
D
= 1.5 A
V
GS
= 4.5, 2.5 V, I
D
= 1.5 A
Capacitance
Source-Drain Diode Forward Voltage
Threshold Voltage
0
200
400
600
800
1000
1200
0 4 8 12 16 20
C - Capacitance (pF)
V
DS
- Drain-to-Source Voltage (V)
C
iss
C
oss
C
rss
0.1
1
10
100
0.0 0.2 0.4 0.6 0.8 1.0 1.2
I
S
- Source Current (A)
V
SD
- Source-to-Drain Voltage (V)
T
J
= 150 °C
T
J
= 25 °C
0.5
0.6
0.7
0.8
0.9
1.0
- 50 - 25 0 25 50 75 100 125 150
V
GS(th)
(V)
T
J
- Temperature (°C)
I
D
= 250 μA