Datasheet
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Document Number: 62752
S12-1763-Rev. A, 23-Jul-12
Vishay Siliconix
Si8489EDB
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact: pmostechsupport@vishay.com
Notes:
a. Surface mounted on 1" x 1" FR4 board with full copper.
b. Maximum under steady state conditions is 100 °C/W.
c. Surface mounted on 1" x 1" FR4 board with minimum copper.
d. Maximum under steady state conditions is 190 °C/W.
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient
a, b
t = 10 s
R
thJA
55 70
°C/W
Maximum Junction-to-Ambient
c, d
t = 10 s
125 160
SPECIFICATIONS (T
J
= 25 °C, unless otherwise noted)
Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Drain-Source Breakdown Voltage
V
DS
V
GS
= 0 V, I
D
= - 250 µA
- 20 V
V
DS
Temperature Coefficient V
DS
/T
J
I
D
= - 250 µA
- 15
mV/°C
V
GS(th)
Temperature Coefficient V
GS(th)
/T
J
2.4
Gate-Source Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= - 250 µA
- 0.5 - 1.2 V
Gate-Source Leakage
I
GSS
V
DS
= 0 V, V
GS
= ± 4.5 V
± 1
µA
V
DS
= 0 V, V
GS
= ± 12 V
± 5
Zero Gate Voltage Drain Current
I
DSS
V
DS
= - 20 V, V
GS
= 0 V
- 1
V
DS
= - 20 V, V
GS
= 0 V, T
J
= 70 °C
- 10
On-State Drain Current
a
I
D(on)
V
DS
- 5 V, V
GS
= - 4.5 V
- 10 A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= - 10 V, I
D
= - 1.5 A
0.036 0.044
V
GS
= - 4.5 V, I
D
= - 1.5 A
0.045 0.054
V
GS
= - 2.5 V, I
D
= - 1 A
0.065 0.082
Forward Transconductance
a
g
fs
V
DS
= - 10 V, I
D
= - 1.5 A
10 S
Dynamic
b
Input Capacitance
C
iss
V
DS
= - 10 V, V
GS
= 0 V, f = 1 MHz
765
pFOutput Capacitance
C
oss
125
Reverse Transfer Capacitance
C
rss
115
Total Gate Charge
Q
g
V
DS
= - 10 V, V
GS
= - 10 V, I
D
= - 1.5 A
17.5 27
nC
V
DS
= - 10 V, V
GS
= - 4.5 V, I
D
= - 1.5 A
8.6 13
Gate-Source Charge
Q
gs
1.5
Gate-Drain Charge
Q
gd
2.6
Gate Resistance
R
g
V
GS
= - 0.1 V, f = 1 MHz
14
Tur n - O n D e l ay Time
t
d(on)
V
DD
= - 10 V, R
L
= 10
I
D
- 1.5 A, V
GEN
= - 4.5 V, R
g
= 1
27 50
ns
Rise Time
t
r
20 40
Turn-Off Delay Time
t
d(off)
50 100
Fall Time
t
f
25 50
Tur n - O n D e l ay T im e
t
d(on)
V
DD
= - 10 V, R
L
= 10
I
D
- 1.5 A, V
GEN
= - 8 V, R
g
= 1
615
Rise Time
t
r
820
Turn-Off Delay Time
t
d(off)
68 130
Fall Time
t
f
28 60