Datasheet
Si8487DB
www.vishay.com
Vishay Siliconix
S14-2452-Rev. D, 08-Dec-14
3
Document Number: 63483
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Output Characteristics
On-Resistance vs. Drain Current
Gate Charge
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0
5
10
15
20
0.0 0.5 1.0 1.5 2.0 2.5 3.0
I
D
- Drain Current (A)
V
DS
-Drain-to-Source Voltage (V)
V
GS
= 2 V
V
GS
= 5 V thru 2.5 V
V
GS
= 1.5 V
0.01
0.02
0.03
0.04
0.05
0 5 10 15 20 25
R
DS(on)
-On-Resistance (Ω)
I
D
- Drain Current (A)
V
GS
= 2.5 V
V
GS
= 4.5 V
V
GS
= 10 V
0
2
4
6
8
10
0 10 20 30 40 50 60
V
GS
- Gate-to-Source Voltage (V)
Q
g
-Total Gate Charge (nC)
V
DS
= 24 V
V
DS
= 7.5 V
V
DS
= 15 V
I
D
= 2 A
0
2
4
6
8
10
0.0 0.5 1.0 1.5 2.0 2.5
I
D
- Drain Current (A)
V
GS
- Gate-to-Source Voltage (V)
T
C
= 25 °C
T
C
= 125 °C
T
C
= - 55 °C
0
500
1000
1500
2000
2500
3000
0 5 10 15 20 25 30
C - Capacitance (pF)
V
DS
-Drain-to-Source Voltage (V)
C
iss
C
oss
C
rss
0.6
0.8
1.0
1.2
1.4
1.6
- 50 - 25 0 25 50 75 100 125 150
R
DS(on)
-On-Resistance (Normalized)
T
J
- Junction Temperature (°C)
V
GS
= 2.5 V; I
D
= 1 A
V
GS
= 10 V, 4.5 V; I
D
= 2 A