Datasheet
Si8487DB
www.vishay.com
Vishay Siliconix
S14-2452-Rev. D, 08-Dec-14
2
Document Number: 63483
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Surface mounted on 1" x 1" FR4 board with full copper, t = 5 s.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (T
J
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
DS
V
GS
= 0 V, I
D
= -250 μA -30 - - V
V
DS
Temperature Coefficient ΔV
DS
/T
J
I
D
= -250 μA
--21-
mV/°C
V
GS(th)
Temperature Coefficient ΔV
GS(th)
/T
J
-3.3-
Gate-Source Threshold Voltage V
GS(th)
V
DS
= V
GS
, I
D
= -250 μA -0.6 - -1.2 V
Gate-Source Leakage I
GSS
V
DS
= 0 V, V
GS
= ± 12 V - - ± 100 nA
Zero Gate Voltage Drain Current I
DSS
V
DS
= -30 V, V
GS
= 0 V - - -1
μA
V
DS
= -30 V, V
GS
= 0 V, T
J
= 70 °C - - -10
On-State Drain Current
a
I
D(on)
V
DS
≤ -5 V, V
GS
= -4.5 V -5 - - A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= -10 V, I
D
= -2 A - 0.025 0.031
ΩV
GS
= -4.5 V, I
D
= -2 A - 0.028 0.035
V
GS
= -2.5 V, I
D
= -1 A - 0.036 0.045
Forward Transconductance
a
g
fs
V
DS
= -10 V, I
D
= -2 A - 16 - S
Dynamic
b
Input Capacitance C
iss
V
DS
= -15 V, V
GS
= 0 V, f = 1 MHz
- 2240 4480
pFOutput Capacitance C
oss
- 200 400
Reverse Transfer Capacitance C
rss
- 165 330
Total Gate Charge Q
g
V
DS
= -15 V, V
GS
= -10 V, I
D
= -2 A - 52 80
nC
V
DS
= -15 V, V
GS
= -4.5 V, I
D
= -2 A
-2540
Gate-Source Charge Q
gs
-4.1-
Gate-Drain Charge Q
gd
-5.7-
Gate Resistance R
g
V
GS
= -0.1 V, f = 1 MHz - 15 30 Ω
Turn-On Delay Time t
d(on)
V
DD
= -15 V, R
L
= 15 Ω
I
D
≅ -2 A, V
GEN
= -4.5 V, R
g
= 1 Ω
-2550
ns
Rise Time t
r
-2245
Turn-Off Delay Time t
d(off)
- 195 390
Fall Time t
f
-60120
Turn-On Delay Time t
d(on)
V
DD
= -15 V, R
L
= 15 Ω
I
D
≅ -2 A, V
GEN
= -10 V, R
g
= 1 Ω
-715
Rise Time t
r
-1020
Turn-Off Delay Time t
d(off)
- 290 580
Fall Time t
f
-60120
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode I
S
T
A
= 25 °C - - -2.3
c
A
Pulse Diode Forward Current I
SM
---25
Body Diode Voltage V
SD
I
S
= -2 A, V
GS
= 0 V - -0.75 -1.2 V
Body Diode Reverse Recovery Time t
rr
I
F
= -2 A, dI/dt = 100 A/μs, T
J
= 25 °C
- 86 170 ns
Body Diode Reverse Recovery Charge Q
rr
- 85 170 nC
Reverse Recovery Fall Time t
a
-23-
ns
Reverse Recovery Rise Time t
b
-63-