Datasheet
Vishay Siliconix
Si8424CDB
Document Number: 63894
S13-1703-Rev. B, 29-Jul-13
www.vishay.com
3
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Output Characteristics
On-Resistance vs. Drain Current
Gate Charge
0
5
10
15
20
25
0.0 0.5 1.0 1.5 2.0 2.5
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
V
GS
= 5 V thru 1.5 V
V
GS
= 1 V
0.000
0.010
0.020
0.030
0.040
0.050
0 5 10 15 20 25
R
DS(on)
- On-Resistance (Ω)
I
D
- Drain Current (A)
V
GS
= 1.2 V
V
GS
= 1.5 V
V
GS
= 2.5 V
V
GS
= 4.5 V
V
GS
= 1.8 V
0
1
2
3
4
5
0 5 10 15 20 25 30
V
GS
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
DS
= 6.4 V
V
DS
= 2 V
V
DS
= 4 V
I
D
= 2 A
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0
2
4
6
8
10
0.0 0.2 0.4 0.6 0.8 1.0 1.2
I
D
- Drain Current (A)
V
GS
- Gate-to-Source Voltage (V)
T
C
= 25 °C
T
C
= 125 °C
T
C
= - 55 °C
0
500
1000
1500
2000
2500
3000
3500
0 2 4 6 8
C - Capacitance (pF)
V
DS
- Drain-to-Source Voltage (V)
C
iss
C
oss
C
rss
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
- 50 - 25 0 25 50 75 100 125 150
R
DS(on)
- On-Resistance
(Normalized)
T
J
- Junction Temperature (°C)
V
GS
= 1.2V; I
D
= 0.5A
V
GS
= 4.5V, 2.5V, 1.8V, 1.5V;
I
D
= 1.5A