Datasheet
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Document Number: 63894
S13-1703-Rev. B, 29-Jul-13
Vishay Siliconix
Si8424CDB
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact: pmostechsupport@vishay.com
Notes:
a. Surface mounted on 1" x 1" FR4 board with full copper, t = 5 s.
b. Maximum under steady state conditions is 85 °C/W.
c. Surface mounted on 1" x 1" FR4 board with minimum copper, t = 5 s.
d. Maximum under steady state conditions is 175 °C/W.
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Surface mounted on 1" x 1" FR4 board with full copper, t = 5 s.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient
a, b
t = 5 s
R
thJA
35 45
°C/W
Maximum Junction-to-Ambient
c, d
t = 5 s
R
thJA
85 110
SPECIFICATIONS (T
J
= 25 °C, unless otherwise noted)
Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Drain-Source Breakdown Voltage
V
DS
V
GS
= 0 V, I
D
= 250 µA
8V
V
DS
Temperature Coefficient
V
DS
/T
J
I
D
= 250 µA
3
mV/°C
V
GS(th)
Temperature Coefficient
V
GS(th)
/T
J
- 2.6
Gate-Source Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 µA
0.35 0.8 V
Gate-Source Leakage
I
GSS
V
DS
= 0 V, V
GS
= ± 5 V
± 100 nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 8 V, V
GS
= 0 V
1
µA
V
DS
= 8 V, V
GS
= 0 V, T
J
= 70 °C
10
On-State Drain Current
a
I
D(on)
V
DS
5 V, V
GS
= 4.5 V
5A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= 4.5 V, I
D
= 2 A
0.015 0.020
V
GS
= 2.5 V, I
D
= 1 A
0.016 0.021
V
GS
= 1.8 V, I
D
= 1 A
0.017 0.023
V
GS
= 1.5 V, I
D
= 1 A
0.018 0.028
V
GS
= 1.2 V, I
D
= 0.5 A
0.022 0.045
Forward Transconductance
a
g
fs
V
DS
= 4 V, I
D
= 2 A
30 S
Dynamic
b
Input Capacitance
C
iss
V
DS
= 4 V, V
GS
= 0 V, f = 1 MHz
2340
pF
Output Capacitance
C
oss
870
Reverse Transfer Capacitance
C
rss
600
Total Gate Charge
Q
g
V
DS
= 4 V, V
GS
= 4.5 V, I
D
= 2 A
25 40
nCGate-Source Charge
Q
gs
3.3
Gate-Drain Charge
Q
gd
3.6
Gate Resistance
R
g
V
GS
= 0.1 V, f = 1 MHz
3.5
Tur n - O n D e l ay Time
t
d(on)
V
DD
= 4 V, R
L
= 2
I
D
2 A, V
GEN
= 4.5 V, R
g
= 1
13 30
ns
Rise Time
t
r
19 40
Turn-Off Delay Time
t
d(off)
73 150
Fall Time
t
f
20 40
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode
I
S
T
A
= 25 °C
2.3
c
A
Pulse Diode Forward Current
I
SM
25
Body Diode Voltage
V
SD
I
S
= 2 A, V
GS
= 0 V
0.7 1.2 V
Body Diode Reverse Recovery Time
t
rr
I
F
= 2 A, dI/dt = 100 A/µs, T
J
= 25 °C
40 80 ns
Body Diode Reverse Recovery Charge
Q
rr
20 40 nC
Reverse Recovery Fall Time
t
a
15
ns
Reverse Recovery Rise Time
t
b
25