Datasheet

ManualsBrandsVISHAY ManualsFETsSI8424CDB-T1-E1, MOSFET

Vishay Siliconix

Si8424CDB

Document Number: 63894

S13-1703-Rev. B, 29-Jul-13

www.vishay.com

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

For technical questions, contact: pmostechsupport@vishay.com

N-Channel 8 V (D-S) MOSFET

FEATURES

• TrenchFET

Power MOSFET

• Low-on Resistance

• Ultra-Small 1.6 mm x 1.6 mm Maximum Outline

• Ultra-Thin 0.6 mm Maximum Height

• Material categorization:

For definitions of compliance please see

www.vishay.com/doc?99912

APPLICATIONS

• Mobile Computing, Smart Phones, Tablet PCs

- Load Switch

- Low Voltage Drop Switch

Notes:

a. Surface mounted on 1" x 1" FR4 board with full copper, t = 5 s.

b. Surface mounted on 1" x 1" FR4 board with minimum copper, t = 5 s.

c. Refer to IPC/JEDEC (J-STD-020), no manual or hand soldering.

d. In this document, any reference to case represents the body of the MICRO FOOT device and foot is the bump.

e. Based on T

= 25 °C.

PRODUCT SUMMARY

(V) R

DS(on)

() Max.

(A)

a, e

(Typ.)

0.020 at V

= 4.5 V

25 nC

0.021 at V

= 2.5 V

9.7

0.023 at V

= 1.8 V

9.3

0.028 at V

= 1.5 V

8.4

0.045 at V

= 1.2 V

MICRO FOOT

Bump Side View Backside View

Device Marking: 8424C

xxx = Date/Lot Traceability Code

8424C

xxx

Ordering Information: Si8424CDB-T1-E1 (Lead (Pb)-free and Halogen-free)

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (T

= 25 °C, unless otherwise noted)

Parameter Symbol Limit Unit

Drain-Source Voltage

Gate-Source Voltage

± 5

Continuous Drain Current (T

= 150 °C)

= 25 °C

= 70 °C 8

= 25 °C 6.3

= 70 °C 5.1

Pulsed Drain Current (t = 300 µs)

Continuous Source-Drain Diode Current

= 25 °C

2.3

= 25 °C 0.92

Maximum Power Dissipation

= 25 °C

2.7

= 70 °C 1.8

= 25 °C 1.1

= 70 °C 0.73

Operating Junction and Storage Temperature Range

, T

stg

- 55 to 150

°C

Package Reflow Conditions

260

IR/Convection 260

Summary of content (11 pages)

PAGE 1
Si8424CDB Vishay Siliconix N-Channel 8 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 8 ID (A)a, e RDS(on) () Max. 0.020 at VGS = 4.5 V 10 0.021 at VGS = 2.5 V 9.7 0.023 at VGS = 1.8 V 9.3 0.028 at VGS = 1.5 V 8.4 0.045 at VGS = 1.2 V 5 Qg (Typ.) 25 nC • • • • • TrenchFET® Power MOSFET Low-on Resistance Ultra-Small 1.6 mm x 1.6 mm Maximum Outline Ultra-Thin 0.6 mm Maximum Height Material categorization: For definitions of compliance please see www.vishay.
PAGE 2
Si8424CDB Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta, b Maximum Junction-to-Ambientc, d Symbol RthJA RthJA t=5s t=5s Typical Maximum Unit 35 85 45 110 °C/W Notes: a. Surface mounted on 1" x 1" FR4 board with full copper, t = 5 s. b. Maximum under steady state conditions is 85 °C/W. c. Surface mounted on 1" x 1" FR4 board with minimum copper, t = 5 s. d. Maximum under steady state conditions is 175 °C/W.
PAGE 3
Si8424CDB Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 25 10 VGS = 5 V thru 1.5 V 8 ID - Drain Current (A) ID - Drain Current (A) 20 15 10 VGS = 1 V 6 TC = 25 °C 4 5 2 0 0 TC = 125 °C TC = - 55 °C 0.0 0.5 1.0 1.5 2.0 2.5 0.0 0.2 0.4 Output Characteristics 1.0 1.2 3500 3000 C - Capacitance (pF) VGS = 1.2 V 0.040 RDS(on) - On-Resistance (Ω) 0.8 Transfer Characteristics 0.050 0.030 VGS = 1.5 V VGS = 1.8 V 0.020 0.
PAGE 4
Si8424CDB Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.050 ID = 2 A 0.040 TJ = 150 °C RDS(on) - On-Resistance (Ω) IS - Source Current (A) 100 10 TJ = 25 °C 1 0.1 0.030 TJ = 125 °C 0.020 TJ = 25 °C 0.010 0.000 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.7 80 0.6 60 Power (W) VGS(th) (V) 0.5 0.
PAGE 5
Si8424CDB Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 8 1.5 1.2 Power (W) ID - Drain Current (A) 6 4 0.9 0.6 2 0.3 0 0.0 0 25 50 75 100 125 TA - Ambient Temperature (°C) 150 25 50 75 100 125 150 TA - Ambient Temperature (°C) Current Derating* Power Derating Note: When Mounted on 1" x 1" FR4 with full Copper. * The power dissipation PD is based on TJ(max.
PAGE 6
Si8424CDB Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 85 °C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 0.01 10 - 4 10 - 3 4.
PAGE 7
Si8424CDB Vishay Siliconix PACKAGE OUTLINE MICRO FOOT 1.6 x 1.6: 4-BUMP (0.8 mm PITCH) 4 x Ø 0.30 ~ 0.31 Note 3 Solder Mask Ø ~ 0.40 e A2 Silicon A A1 Bump Note 2 b Diamerter e S Recommended Land E e 8424C XXX e S D Mark on Backside of Die Notes (Unless otherwise specified): 1. Laser mark on the silicon die back, coated with a thin metal. 2. Bumps are 95.5 Sn/3.8 Ag/0.7 Cu. 3. Non-solder mask defined copper landing pad. 4. The flat side of wafers is oriented at the bottom. Dim.
PAGE 8
AN824 Vishay Siliconix PCB Design and Assembly Guidelines For MICRO FOOTr Products Johnson Zhao INTRODUCTION Vishay Siliconix’s MICRO FOOT product family is based on a wafer-level chip-scale packaging (WL-CSP) technology that implements a solder bump process to eliminate the need for an outer package to encase the silicon die. MICRO FOOT products include power MOSFETs, analog switches, and power ICs.
PAGE 9
AN824 Vishay Siliconix TABLE 1 ÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Main Parameters of Solder Bumps in MICRO FOOT Designs MICRO FOOT CSP Bump Material MICRO FOOT CSP MOSFET Eutectic Solder: 63Sm/37Pb MICRO FOOT CSP Analog Switch MICRO FOOT UCSP Analog Switch Bump Pitch* Bump Diameter* Bump Height* 0
PAGE 10
AN824 Vishay Siliconix TABLE 3 Dimensions of Copper Pad and Solder Mask Opening in PCB and Stencil Aperture ÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁ ÁÁÁÁÁ Á ÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁ Pitch Copper Pad Solder Mask Opening Stencil Aperture 0.80 mm 0.30 " 0.01 mm 0.41 " 0.01 mm 0.33 " 0.01 mm in ciircle aperture 0.50 mm 0.17 " 0.01 mm 0.27 " 0.01 mm 0.30 " 0.
PAGE 11
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