Datasheet

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Document Number: 74409
S-83050-Rev. B, 29-Dec-08
Vishay Siliconix
Si7904BDN
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Source-Drain Diode Forward Voltage
Threshold Voltage
Source Current (A) -
1
100
V
SD
- Source-to-Drain Voltage (V)
I
S
0 0.2
0.4
0.6
0.8 1
10
1.2
T
J
= 150 °C
T
J
= 25 °C
0.2
0.3
0.4
0.5
0.6
0.7
0.
8
- 50 - 25 0 25 50 75 100 125 15
0
I
D
= 250 µA
)V( ecnairaVV
)ht(SG
T
J
- Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power (Junction-to-Ambient)
0.020
0.030
0.040
0.050
0.060
012345
e (Ω)
c
nats
is
e
R
-
n
O
R
DS(on)
-
V
GS
- Gate-to-Source Voltage (V)
I
D
= 7.1 A
125 °C
I
D
= 7.1 A
25 °C
0
10
50
r (W)ewoP
Time (s)
30
40
0.1 60010.010.001
20
10 100
Safe Operating Area, Junction-to-Ambient
100
1
0.1 1 10 100
0.01
10
T
A
= 25 °C
Single Pulse
) A ( t n
e r r u C
n i a
r
D
I
D
-
10 s
DC
0.1
Limited by R
DS(on)
*
BVDSS Limited
1 s
100 ms
10 ms
1 ms
100 µs
V
DS
- Drain-to-Source Voltage (V)
V
GS
minimum V
GS
at which R
DS(on)
is specified
*