Datasheet

Document Number: 74409
S-83050-Rev. B, 29-Dec-08
www.vishay.com
3
Vishay Siliconix
Si7904BDN
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Output Characteristics
On-Resistance vs. Drain Current and Gate Voltage
Gate Charge
0
5
10
15
20
0.0 0.4 0.8 1.2 1.6 2.0
V
GS
= 5 thru 2 V
1 V
V
DS
- Drain-to-Source Voltage (V)
)A( tnerruC niarDI
D
-
1.5 V
0.020
0.030
0.040
0.050
0.060
0 5 10 15 20
(Ω) ecnatsiseR-nO R
DS(on)
-
I
D
- Drain Current (A)
V
GS
= 4.5 V
V
GS
= 1.8 V
V
GS
= 2.5 V
0
1
2
3
4
5
6
7
8
0 3 6 9 12 15 18
)V( egatloV e
cruoS-ot-et
a
G
Q
g
- Total Gate Charge (nC)
V
GS
-
V
DS
= 16 V
I
D
= 6 A
V
DS
= 10 V
I
D
= 6 A
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0
2
4
6
8
10
0.0 0.3 0.6 0.9 1.2 1.5 1.8
25 °C
T
C
= 125 °C
- 55 °C
V
GS
- Gate-to-Source Voltage (V)
)A( tnerruC niarD I
D
-
0
300
600
900
1200
048 12 16 20
C
oss
C
iss
V
DS
- Drain-to-Source Voltage (V)
)Fp( ecnaticapaC C -
C
rss
0.6
0.8
1.0
1.2
1.4
1.6
1.8
- 50 - 25 0 25 50 75 100 125 150
I
D
= 7.1 A
T
J
- Junction Temperature (°C)
R
)
n
o(SD
ecnats
iseR-nO -
)dez
ilamroN(