Datasheet

ManualsBrandsVISHAY ManualsFETsSI7904BDN-T1-GE3, MOSFET

Vishay Siliconix

Si7904BDN

Document Number: 74409

S-83050-Rev. B, 29-Dec-08

www.vishay.com

Dual N-Channel 20-V (D-S) MOSFET

FEATURES

• Halogen-free According to IEC 61249-2-21

Available

• TrenchFET

Power MOSFET

APPLICATIONS

• HDD Spindle Drive

PRODUCT SUMMARY

(V) R

DS(on)

(Ω)

(A)

(Typ.)

0.030 at V

= 4.5 V

9 nC

0.036 at V

= 2.5 V

0.045 at V

= 1.8 V

3.30 mm

PowerPAK 1212-8

Bottom View

Ordering Information: Si7904BDN-T1-E3 (Lead (Pb)-free)

Si7904BDN-T1-GE3 (Lead (Pb)-free and Halogen-free)

N-Channel MOSFET

Notes:

a. Package limited.

b. Surface Mounted on 1" x 1" FR4 board.

c. t = 10 s.

d. See Solder Profile (

www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed

and is not required to ensure adequate bottom side solder interconnection.

e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.

f. Maximum under steady state conditions is 94 °C/W.

ABSOLUTE MAXIMUM RATINGS T

= 25 °C, unless otherwise noted

Parameter Symbol Limit Unit

Drain-Source Voltage V

Gate-Source Voltage V

± 8

Continuous Drain Current (T

= 150 °C)

= 25 °C

= 85 °C

= 25 °C

= 85 °C

5.1

b, c

Pulsed Drain Current I

Continuous Source-Drain Diode Current

= 25 °C

2.1

b, c

Maximum Power Dissipation

= 25 °C

17.8

= 85 °C

9.3

= 25 °C

2.5

b, c

= 85 °C

1.3

b, c

Operating Junction and Storage Temperature Range T

, T

stg

- 55 to 150

°C

Soldering Recommendations (Peak Temperature)

d, e

260

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

b, f

t ≤ 10 s R

thJA

40 50

°C/W

Maximum Junction-to-Case (Drain) Steady State R

thJC

5.6 7

Summary of content (13 pages)

PAGE 1
Si7904BDN Vishay Siliconix Dual N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.030 at VGS = 4.5 V 6 0.036 at VGS = 2.5 V 6 0.045 at VGS = 1.8 V 6 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET Qg (Typ.) 9 nC APPLICATIONS • HDD Spindle Drive PowerPAK 1212-8 S1 3.30 mm 3.
PAGE 2
Si7904BDN Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 20 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage V 22.5 ID = 250 µA mV/°C - 2.
PAGE 3
Si7904BDN Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10 20 VGS = 5 thru 2 V 8 ID - Drain Current (A) ID - Drain Current (A) 15 10 1.5 V 6 4 TC = 125 °C 5 2 0 0.0 0.4 0.8 1.2 1.6 - 55 °C 25 °C 1V 0 0.0 2.0 0.3 VDS - Drain-to-Source Voltage (V) 0.6 0.9 1.2 1.5 1.8 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.060 1200 0.040 VGS = 2.5 V Ciss 900 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) VGS = 1.8 V 0.
PAGE 4
Si7904BDN Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 0.060 RDS(on) - On-Resistance (Ω) IS - Source Current (A) ID = 7.1 A 25 °C T J = 150 °C 10 T J = 25 °C 1 0.040 0.030 0.020 0 0.4 0.2 0.8 0.6 1 0 1.2 1 VSD - Source-to-Drain Voltage (V) 2 3 4 5 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage Source-Drain Diode Forward Voltage 0.8 50 ID = 250 µA 0.7 40 0.6 Power (W) VG S(th) Variance (V) ID = 7.1 A 125 °C 0.050 0.
PAGE 5
Si7904BDN Vishay Siliconix 25 25 20 20 Power Dissipation (W) ID - Drain Current (A) TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 15 10 5 15 10 5 0 0 0 25 50 75 100 TC - Case Temperature (°C) Current Derating* 125 150 25 50 75 100 125 150 T C - Case Temperature (°C) Power Derating * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heats
PAGE 6
Si7904BDN Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1 . Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 75 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 0.01 10-4 10-3 4.
PAGE 7
Package Information www.vishay.com Vishay Siliconix D4 PowerPAK® 1212, (Single/Dual) W H L K E2 E4 M θ e 1 Z D5 D D2 2 2 D1 8 1 5 4 θ 4 b 3 L1 E3 A1 Backside View of Single Pad H 2 E1 E Detail Z 1 D1 2 3 K1 Notes: 1. Inch will govern 2 L K E2 E4 D2 D3(2x) D4 c A H D2 4 Dimensions exclusive of mold gate burrs 3. Dimensions exclusive of mold flash and cutting burrs b θ D5 θ E3 Backside View of Dual Pad DIM. MILLIMETERS INCHES MIN. MAX. MIN. MAX. 0.
PAGE 8
AN822 Vishay Siliconix PowerPAK® 1212 Mounting and Thermal Considerations Johnson Zhao MOSFETs for switching applications are now available with die on resistances around 1 mΩ and with the capability to handle 85 A. While these die capabilities represent a major advance over what was available just a few years ago, it is important for power MOSFET packaging technology to keep pace. It should be obvious that degradation of a high performance die by the package is undesirable.
PAGE 9
AN822 Vishay Siliconix PowerPAK 1212 DUAL To take the advantage of the dual PowerPAK 1212-8’s thermal performance, the minimum recommended land pattern can be found in Application Note 826, Recommended Minimum Pad Patterns With Outline Drawing Access for Vishay Siliconix MOSFETs. Click on the PowerPAK 1212-8 dual in the index of this document. The gap between the two drain pads is 10 mils. This matches the spacing of the two drain pads on the PowerPAK 1212-8 dual package.
PAGE 10
AN822 Vishay Siliconix TABLE 1: EQIVALENT STEADY STATE PERFORMANCE Package SO-8 TSSOP-8 TSOP-8 PPAK 1212 PPAK SO-8 Configuration Single Dual Single Dual Single Dual Single Dual Single Dual Thermal Resiatance RthJC(C/W) 20 40 52 83 40 90 2.4 5.5 1.8 5.5 PowerPAK 1212 Standard SO-8 49.8 °C 2.4 °C/W Standard TSSOP-8 85 °C 20 °C/W TSOP-6 149 °C 52 °C/W 125 °C 40 °C/W PC Board at 45 °C Figure 4.
PAGE 11
AN822 Vishay Siliconix 130 105 Spreading Copper (sq. in.) Spreading Copper (sq. in.) 120 95 110 100 RthJ A (°C/W) RthJA (°C/W) 85 75 65 90 80 50 % 100 % 70 100 % 55 0% 60 50 % 0% 50 45 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 Figure 5. Spreading Copper - Si7401DN Figure 6.
PAGE 12
Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR PowerPAK® 1212-8 Dual 0.152 (3.860) 0.152 (3.860) 0.039 0.039 (0.990) (0.990) 0.068 0.068 (1.725) (1.725) 0.010 (0.255) 0.016 (0.405) 0.016 (0.405) 0.094 (2.390) 0.094 (2.390) 0.010 (0.225) (2.235) 0.088 0.039 (0.990) 0.039 (0.990) 0.026 (0.660) 0.026 (0.660) 0.030 (0.760) 0.025 (0.635) 0.025 0.030 (0.635) (0.
PAGE 13
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